DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
REV1.2 H-10-3 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BC SOT-89 Halogen-Free & Lead-Free 321 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 100 °C 3.5 Pulsed Drain Current1 I DM 15 Avalanche Current I AS 4.8 Avalanche Energy L = 1mH E AS 11.5 mJ Power Dissipation3 TA = 25 °C PD 3.9 W TA = 100 °C 2.5 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 32 °C / W Junction-to-Ambient2 Steady-State RJA 63 Junction-to-Case RJc 20 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 1.8 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 100V 110mΩ 4A G D S
REV1.2 H-10-3 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BC SOT-89 Halogen-Free & Lead-Free Zero Gate Voltage Drain Current I DSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 4A 86 120 mΩ VGS = 10V, ID = 4A 81 110 Forward Transconductance1 g fs V DS = 5V, ID = 4A 22 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 573 pFOutput Capacitance C oss 58 Reverse Transfer Capacitance C rss 32 Gate Resistance Rg V GS = 0V, VDS = 0V, f = 1MHz 1.5 Ω Total Gate Charge2 Q g(VGS=10V) VDS = 50V, ID = 4A 13.6 nCQg(VGS=4.5V) 8 Gate-Source Charge2 Q gs 2 Gate-Drain Charge2 Q gd 4.6 Turn-On Delay Time2 t d(on) VDS = 50V ID 4A, VGS = 10V, RGS = 6Ω nS Rise Time2 t r 5 Turn-Off Delay Time2 t d(off) 35 Fall Time2 t f 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 2.8 A Forward Voltage1 V SD I F = 4A, VGS = 0V 1.4 V Reverse Recovery Time t rr IF = 4A, dI/dt = 100 A/μs 21 nS Reverse Recovery Charge Q rr 14 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.2 H-10-3 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BC SOT-89 Halogen-Free & Lead-Free 012345 On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 3 6 9 12 15VDS=50V ID=4A 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 2468 1 0 ID=4A 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0369 1 2 1 5 VGS=10V VGS=4.5V 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V
REV1.2 H-10-3 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BC SOT-89 Halogen-Free & Lead-Free single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 63 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA T1 , Square Wave Pulse Duration[sec] On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance VSD, Source-To-Drain Voltage(V) 25℃150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=4A 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 63˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 63˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)