PA110BL NIKOSEM | Alldatasheet

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REV1.0 D-33-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BL SOT-223 Halogen-Free & Lead-Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TA = 25 °C 3.2 TA = 100 °C 2 Pulsed Drain Current1 IDM 15 Avalanche Current IAS 6.6 Avalanche Energy L = 0.1mH EAS 2.2 mJ Power Dissipation TA = 25 °C PD 2.5 W TA = 100 °C 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 50 °C / W Junction-to-Case RJC 14 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.8 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 110mΩ 3A G D S

REV1.0 D-33-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BL SOT-223 Halogen-Free & Lead-Free Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6A 85 120 mΩ VGS = 10V, ID = 6A 80 110 Forward Transconductance1 gfs VDS = 5V, ID = 6A 22 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 579 pF Output Capacitance Coss 57 Reverse Transfer Capacitance Crss 31 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Qg VDS = 50V, VGS = 10V, ID = 6A nC Gate-Source Charge2 Qgs 1.8 Gate-Drain Charge2 Qgd 4.6 Turn-On Delay Time2 td(on) 16 nS Rise Time2 tr VDS = 50V 5 Turn-Off Delay Time2 td(off) ID  6A, VGS = 10V, RGS = 6Ω 36 Fall Time2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.7 A Forward Voltage1 VSD IF = 6A, VGS = 0V 1.4 V Reverse Recovery Time trr IF = 6A, dI/dt = 100 A/μs 22 nS Reverse Recovery Charge Qrr 15 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 D-33-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BL SOT-223 Halogen-Free & Lead-Free 25℃ 150℃ 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6A 0 3 6 9 12 15 VDS=50V ID=6A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=5V VGS=4.5V VGS=3.5V VGS=3.1V VGS=2.7V VGS=2.9V VGS=3.3V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF)

REV1.0 D-33-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA110BL SOT-223 Halogen-Free & Lead-Free single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 47 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 50 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]