P1260ETF NIKOSEM | Alldatasheet

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N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM REV 1.0 P1260ETF:TO-220F P1260ETFS:TO-220FS Halogen-Free & Lead-Free ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 7.6 Pulsed Drain Current1 IDM 48 Avalanche Current 3 IAS 7.3 Avalanche Energy3 EAS 264 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 19 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.6 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 10mH ,starting TJ = 25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 600 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 2.8 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V , TC = 25 °C 1 VDS = 480V, VGS = 0V , TC = 100 °C 10 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 670mΩ 12A G D S 2 31 1. GATE 2. DRAIN 3. SOURCE

N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM REV 1.0 P1260ETF:TO-220F P1260ETFS:TO-220FS Halogen-Free & Lead-Free Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 6A 518 670 mΩ Forward Transconductance1 gfs VDS = 10V, ID = 6A 15 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 2023 pF Output Capacitance Coss 172 Reverse Transfer Capacitance Crss 9 Total Gate Charge2 Qg VDD = 480V, ID =12A, VGS = 10V nC Gate-Source Charge2 Qgs 9 Gate-Drain Charge2 Qgd 14 Turn-On Delay Time2 td(on) VDD = 300V, ID =12A, RG= 25Ω nS Rise Time2 tr 54 Turn-Off Delay Time2 td(off) 169 Fall Time2 tf 93 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 12 A Forward Voltage1 VSD IF =12A, VGS = 0V 1 V Reverse Recovery Time trr IF =12A, dlF/dt = 100A / S 449 nS Reverse Recovery Charge Qrr 6 uC 1Pulse test : Pulse Width  380 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.

N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM REV 1.0 P1260ETF:TO-220F P1260ETFS:TO-220FS Halogen-Free & Lead-Free Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 2 4 6 8 10 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V -20℃ 25℃ 125℃ 0 2 4 6 8 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 ID=6A 0.0 0.2 0.4 0.6 0.8 1.0 0 3 6 9 12 15 VGS=10V 0.4 0.9 1.4 1.9 2.4 2.9 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6A CISS COSS CRSS 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30

N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM REV 1.0 P1260ETF:TO-220F P1260ETFS:TO-220FS Halogen-Free & Lead-Free Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 10 20 30 40 50 VDS=480V ID=12A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.6˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 140 210 280 350 0.01 0.1 1 10 100 Single Pulse RθJC = 2.6˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC