PA567EA NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- ESD Protection − HBM Class : 1C.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications.
- Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±12 V Continuous Drain Current TA = 25 °C ID -0.68 A TA = 70 °C -0.54 Pulsed Drain Current1 IDM -2.1 Power Dissipation TA = 25 °C PD 0.41 W TA = 70 °C 0.26 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 Steady-State RJA 300 °C/W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. G: GATE D: DRAIN S: SOURCE
REV1.2 I-27-2 P-Channel Enhancement Mode Field Effect Transistor PA567EA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.4 -0.65 -1.2 Gate-Body Leakage IGSS VDS = 0V, VGS = ±10V ±30 uA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -0.45A 442 520 mΩ VGS = -2.5V, ID = -0.1A 618 800 Forward Transconductance1 gfs VDS = -5V, ID = -0.45A 1 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz pF Output Capacitance Coss 18 Reverse Transfer Capacitance Crss 9.6 Total Gate Charge2 Qg VDS = -20V , VGS =-4.5V, ID = -1A 1.1 nC Gate-Source Charge2 Qgs 0.2 Gate-Drain Charge2 Qgd 0.3 Turn-On Delay Time2 td(on) VDD = -10V, VGS = -4.5V ID -0.45A, RG = 5.1Ω nS Rise Time2 tr 30 Turn-Off Delay Time2 td(off) 76 Fall Time2 tf 46 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -0.34 A Forward Voltage1 VSD IF = -0.45A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -1A, dlF/dt = 100A / S 46 nS Reverse Recovery Charge Qrr 28 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.2 I-27-2 P-Channel Enhancement Mode Field Effect Transistor PA567EA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM 25℃ 125℃ -20℃ 0.4 0.8 1.2 1.6 0 1 2 3 4 0.4 0.8 1.2 1.6 ID=-0.45A 0.3 0.6 0.9 1.2 1.5 0 0.4 0.8 1.2 1.6 2 VGS=-2.5V VGS=-4.5V C , Capacitance(pF) Transfer Characteristics Output Characteristics Capacitance Characteristic -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) On-Resistance VS Temperature On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0.4 0.8 1.2 1.6 0 1 2 3 4 VGS=-4.5V VGS=-4V VGS=-3V VGS=-1.6V VGS=-1.8V VGS=-2.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-0.45A CISS COSS CRSS 0 5 10 15 20 25 -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) -VDS, Drain-To-Source Voltage(V) -VGS, Gate-To-Source Voltage(V)
REV1.2 I-27-2 P-Channel Enhancement Mode Field Effect Transistor PA567EA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS = -4.5V 2.TA = 25˚C 3.RθJA = 300˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.6 1.2 1.8 2.4 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 300˚C/W TA = 25˚C 0.9 1.8 2.7 3.6 4.5 0 0.3 0.6 0.9 1.2 VDS=-20V ID=-1A Source-Drain Diode Forward Voltage -IS , Source Current(A) -VSD, Source-To-Drain Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Power(W) 25℃ 125℃ single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 300 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA