PZF010HK

PZF010HK NIKOSEM | Alldatasheet

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Halogen-Free & Lead-Free REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM D1 D1 D2 D2 S1 G1 S2 G2#1 Gate Drain Source Gate Drain Source ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±16 V Continuous Drain Current TC = 25 °C ID 2.7 A TC = 100 °C 1.7 Pulsed Drain Current1 IDM 4.5 Continuous Drain Current TA = 25 °C ID 1.1 TA = 70 °C 0.9 Avalanche Current IAS 1.3 Avalanche Energy L = 1mH EAS 0.85 mJ Power Dissipation TC = 25 °C PD 10.4 W TC = 100 °C 4.1 Power Dissipation TA = 25 °C PD 1.7 W TA = 70 °C 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 74 °C / W Junction-to-Case RJC 12 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 590mΩ 2.7A

Halogen-Free & Lead-Free REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±16V ±30 uA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 1A 491 650 mΩ VGS = 10V, ID = 1A 455 590 Forward Transconductance1 gfs VDS = 5V, ID = 1A 4.2 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 112 pF Output Capacitance Coss 20 Reverse Transfer Capacitance Crss 10 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 4.2 Ω Total Gate Charge2 Qg VGS = 10V VDS = 50V , VGS = 10V, ID = 1A 3.8 nC VGS = 4.5V 2.8 Gate-Source Charge2 Qgs 0.3 Gate-Drain Charge2 Qgd 2 Turn-On Delay Time2 td(on) VDS = 50V , ID  1A, VGS = 10V, RGEN =6Ω 7.1 nS Rise Time2 tr 6 Turn-Off Delay Time2 td(off) 13.7 Fall Time2 tf 2.5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.7 A Forward Voltage1 VSD IF = 1A, VGS = 0V 1 V Reverse Recovery Time trr IF = 1A, dlF/dt = 100A / S 22 nS Reverse Recovery Charge Qrr 10 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

Halogen-Free & Lead-Free REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=1A 0.2 0.4 0.6 0.8 2 4 6 8 10 ID=1A 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.3V VGS=3.1V VGS=2.9V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0.2 0.4 0.6 0.8 0 0.8 1.6 2.4 3.2 4 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 100 120 140 0 5 10 15 20 25 30

Halogen-Free & Lead-Free REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 73˚C/W TA=25˚C Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 1 2 3 4 5 VDS=50V ID=1A 25℃ 150℃ 0.1 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 73˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 73 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA

Halogen-Free & Lead-Free REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 13 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC