PZC010BL NIKOSEM | Alldatasheet

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REV1.0 H-36-5 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PZC010BL SOT-223 Halogen-Free & Lead-Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±16 V Continuous Drain Current TA = 25 °C ID 2.2 A TA = 70 °C 1.7 Pulsed Drain Current1 IDM 7 Avalanche Current IAS 1.3 Avalanche Energy L = 1mH EAS 0.85 mJ Power Dissipation3 TA = 25 °C PD 3.5 W TA = 70 °C 2.2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / W Junction-to-Ambient2 Steady-State RJA 60 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±16V ±30 uA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 uA VDS = 80V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 295mΩ 2.2A ESD Protected Gate

REV1.0 H-36-5 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PZC010BL SOT-223 Halogen-Free & Lead-Free Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 1A 233 330 mΩ VGS = 10V, ID = 1A 219 295 Forward Transconductance1 gfs VDS = 5V, ID = 1A 4 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 213 pF Output Capacitance Coss 33 Reverse Transfer Capacitance Crss 18 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.3 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 50V, ID = 1A 6.3 nC Qg(VGS=4.5V) 4.2 Gate-Source Charge2 Qgs 0.5 Gate-Drain Charge2 Qgd 2.5 Turn-On Delay Time2 td(on) VDS = 50V ID  1A, VGS = 10V, RGS = 6Ω 7.5 nS Rise Time2 tr 5.3 Turn-Off Delay Time2 td(off) 17 Fall Time2 tf 3 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 2.2 A Forward Voltage1 VSD IF = 1A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 1A, dI/dt = 100 A/μs 21 nS Reverse Recovery Charge Qrr 20 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 H-36-5 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PZC010BL SOT-223 Halogen-Free & Lead-Free Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.7V 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6 7 VGS=10V VGS=4.5V 0.02 0.22 0.42 0.62 0.82 2 4 6 8 10 ID=1A CISS COSS CRSS 100 150 200 250 300 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=1A

REV1.0 H-36-5 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PZC010BL SOT-223 Halogen-Free & Lead-Free single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0 2 4 6 8 10 VDS=50V ID=1A Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 60 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60 ˚C/W TA = 25˚C