PZ607UZ

PZ607UZ NIKOSEM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
• ESD Protection − HBM Class : 1C.

Applications

• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±10 ±12 V Continuous Drain Current TA = 25 °C ID 0.78 -0.53 A TA = 70 °C 0.62 -0.42 Pulsed Drain Current1 IDM 2.4 -1 Power Dissipation TA = 25 °C PD 0.31 0.25 W TA = 70 °C 0.2 0.16 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 300mΩ 0.78A P-Channel -20V 520mΩ -0.53A

REV 1.2 I-27-1 N- & P-Channel Enhancement Mode Field Effect Transistor PZ607UZ SOT-363 Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA N-ch 400 °C / W Junction-to-Ambient2 RJA P-ch 500 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A N-Ch P-Ch -20 V VGS = 0V, ID = -250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A N-Ch P-Ch 0.4 -0.4 0.75 -0.96 -1.2 VDS = VGS, ID = -250A Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V N-Ch P-Ch ±30 ±30 uA VDS = 0V, VGS = ±10V Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V N-Ch P-Ch 1 VDS = -16V, VGS = 0V VDS = 10V, VGS = 0V, TJ = 55 °C N-Ch P-Ch 10 -10 VDS = -10V, VGS = 0V, TJ = 55 °C Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 0.5A N-Ch P-Ch 177 500 300 520 mΩ VGS = -4.5V, ID = -0.45A VGS = 2.5V, ID = 0.25A N-Ch P-Ch 226 770 400 800 VGS = -2.5V, ID = -0.1A Forward Transconductance1 gfs VDS = 10V, ID = 0.5A N-Ch P-Ch 5 1.6 S VDS = -10V, ID = -0.45A

REV 1.2 I-27-1 N- & P-Channel Enhancement Mode Field Effect Transistor PZ607UZ SOT-363 Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch pF Output Capacitance Coss N-Ch P-Ch Reverse Transfer Capacitance Crss N-Ch P-Ch 10 Turn-On Delay Time2 td(on) N-Channel VDS = 10V, ID  0.5A, VGS = 4.5V, RGEN = 5.1Ω P-Channel VDS = -10V, ID  -0.45A, VGS = -4.5V, RGEN = 5.1Ω N-Ch P-Ch 17 nS Rise Time2 tr N-Ch P-Ch 36 Turn-Off Delay Time2 td(off) N-Ch P-Ch 86 Fall Time2 tf N-Ch P-Ch 173 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS N-Ch P-Ch 0.25 -0.2 A Forward Voltage1 VSD IF = 0.5A, VGS = 0V N-Ch P-Ch 1.2 -1.2 V IF = -0.45A, VGS = 0V Reverse Recovery Time trr IF = 1A, dlF/dt = 100A / S IF = -1A, dlF/dt = 100A / S N-Ch P-Ch 111 46 nS Reverse Recovery Charge Qrr N-Ch P-Ch 102 28 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

REV 1.2 I-27-1 N- & P-Channel Enhancement Mode Field Effect Transistor PZ607UZ SOT-363 Halogen-Free & Lead-Free NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V CISS COSS CRSS 0 5 10 15 20 25 0.1 0.2 0.3 0.4 0.5 0 0.4 0.8 1.2 1.6 2 VGS=4.5V VGS=2.5V 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 ID=0.5A 25℃ 125℃ -20℃ 0.4 0.8 1.2 1.6 0 1 2 3 4 0.4 0.8 1.2 1.6 0 0.5 1 1.5 2 2.5 3 VGS=4.5V VGS=2.5V VGS=1.8V VGS=1.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) N-CHANNEL

REV 1.2 I-27-1 N- & P-Channel Enhancement Mode Field Effect Transistor PZ607UZ SOT-363 Halogen-Free & Lead-Free NIKO-SEM 0.3 0.6 0.9 1.2 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 400˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA=25˚C 3.RθJA = 400˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.9 1.8 2.7 3.6 4.5 VDS=20V ID=1A 25℃ 150℃ 0.1 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 400 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Power(W) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V)

REV 1.2 I-27-1 N- & P-Channel Enhancement Mode Field Effect Transistor PZ607UZ SOT-363 Halogen-Free & Lead-Free NIKO-SEM 0.4 0.8 1.2 1.6 VGS=-4.5V VGS=-2.5V VGS=-1.8V 0.2 0.4 0.6 0.8 0 1 2 3 4 5 VGS=-4.5V VGS=-3V VGS=-2.5V VGS=-2V VGS=-1.8V 25℃ 150℃ 0.1 25℃ 125℃ -20℃ 0.2 0.4 0.6 0.8 0 1 2 3 4 CISS COSS CRSS 0 5 10 15 20 25 0 1 2 3 4 5 ID=-0.45A C , Capacitance(pF) Transfer Characteristics Output Characteristics -VDS, Drain-To-Source Voltage(V) Source-Drain Diode Forward Voltage -IS , Source Current(A) -VSD, Source-To-Drain Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) P-CHANNEL -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) -VDS, Drain-To-Source Voltage(V) -VGS, Gate-To-Source Voltage(V) Capacitance Characteristic

REV 1.2 I-27-1 N- & P-Channel Enhancement Mode Field Effect Transistor PZ607UZ SOT-363 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 500 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS= -4.5V 2.TA=25˚C 3.RθJA = 500˚C/W 4.Single Pulse Operation in This Area is Limited by 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 500 ˚C/W TA=25˚C 0.9 1.8 2.7 3.6 4.5 0 0.3 0.6 0.9 1.2 VDS=-20V ID=-1A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-0.45A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) On-Resistance VS Temperature Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Power(W)