PZ5S6EA NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- ESD Protection - HBM Class : 2.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications.
- Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±12 V Continuous Drain Current2 TA = 25 °C ID 0.61 A TA = 70 °C 0.49 Pulsed Drain Current1 IDM 1.6 A Power Dissipation TA = 25 °C PD 0.36 W TA = 70 °C 0.23 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 340 °C / W 1Limited by maximum junction temperature. 2Limited by package. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.4 0.8 1.2 V(BR)DSS RDS(ON) ID 30V 480mΩ 0.61A
REV1.0 K-19-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PZ5S6EA SOT-323 Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage IGSS VDS = 0V, VGS = ±10V ±30 A Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 0.5A 328 480 mΩ VGS = 2.5V, ID = 0.25A 415 700 Forward Transconductance1 gfs VDS = 5V, ID = 0.5A 2.2 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 46 pF Output Capacitance Coss 15 Reverse Transfer Capacitance Crss 7 Turn-On Delay Time2 td(on) VDD = 15V , ID 1A , VGS = 4.5V, RGEN = 6Ω nS Rise Time2 tr 32 Turn-Off Delay Time2 td(off) 92 Fall Time2 tf 46 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 0.3 A Forward Voltage1 VSD IF = 0.5A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 1A, dI/dt = 100 A/μs 49 nS Reverse Recovery Charge Qrr 36 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 K-19-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PZ5S6EA SOT-323 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) CISS COSS CRSS 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=0.5A 25℃ 125℃ -20℃ 0.4 0.8 1.2 1.6 0 0.8 1.6 2.4 3.2 4 0.4 0.8 1.2 1.6 0 0.8 1.6 2.4 3.2 4 VGS=4.5V VGS=4V VGS=3V VGS=2.5V VGS=1.8V VGS=1.6V VGS=1.9V VGS=1.5V VGS=1.7V 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 VGS=4.5V VGS=2.5V 0.2 0.4 0.6 0.8 ID=0.5A
REV1.0 K-19-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PZ5S6EA SOT-323 Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area ID , Drain Current(A) VDS, Drain-To-Source Voltage(V) 150℃ 25℃ 0.1 DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS = 4.5V 2.TA =25˚C 3.RθJA = 340 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)