DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

REV 1.0 E-31-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PZ2N7002M SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±25 V Continuous Drain Current TC = 25 ° C ID 300 mA TC = 100 ° C 190 Pulsed Drain Current1 I DM 1 A Power Dissipation TC = 25 ° C PD 0.35 W TC = 100 ° C 0.14 Operating Junction & Storage Temperature Range T j, Tstg -40 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 350 ° C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 100A 60 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 100A 1.0 1.8 2.5 Gate-Body Leakage I GSS V DS = 0V, VGS = ±16V ±30 A Zero Gate Voltage Drain Current I DSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 125 ° C 10 On-State Drain Current1 I D(ON) V DS = 10V, VGS = 10V 1 A Drain-Source On-State Resistance1 R DS(ON) VGS = 3.5V, ID = 10mA 2.1 5 ΩVGS = 4.5V, ID = 100mA 1.7 3 VGS = 10V, ID = 200mA 1.6 2 Forward Transconductance1 g fs V DS = 20V, ID = 200mA 0.18 S Gate Drain Source PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 60V 2Ω 300mA G. GATE D. DRAIN S. SOURCE ESD PROTECTION DIODE

REV 1.0 E-31-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PZ2N7002M SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz pFOutput Capacitance C oss 10 Reverse Transfer Capacitance C rss 6 Total Gate Charge2 Q g VDS = 0.5V(BR)DSS, VGS = 10V, ID = 200mA 1.6 nCGate-Source Charge2 Q gs 0.2 Gate-Drain Charge2 Q gd 1 Turn-On Delay Time2 t d(on) VDD = 30V, ID =200mA, RG=10Ω VGS = 10V ns Turn-Off Delay Time2 t d(off) 125 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current I S IF =200mA, VGS = 0V 300 mA Forward Voltage1 V SD 1.2 V 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: ESD Protected Gate, 2KV HBM

REV 1.0 E-31-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PZ2N7002M SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM VGS =3.5V 0.0E+00 2.0E-01 4.0E-01 6.0E-01 8.0E-01 012345 Source-Drain Diode Forward Voltage VGS=10V VGS=9 V VGS=8 V VGS=7 V VGS=6 V VGS=5 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 RDS(ON) ╳ VGS=10V ID=200m A RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ 25℃ 0.2 0.4 0.6 0.8 11 . 522 . 533 . 54 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E+02 1.0E+03 1.3 TJ =25°C TJ =150°C Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature RDS(ON)ON-Resistance(OHM) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) VSD, Source-To-Drain Voltage(V) IS , Source Current(A) CISS COSS CRSS 0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 VDS=30V ID =0.2A

REV 1.0 E-31-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PZ2N7002M SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM single Pluse Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00E-02 1.00E-01 1.00E+00 1.00E+01 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 -55 -30 -5 20 45 70 95 120 145 170 Typ ID=1mA Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] Note 1.Duty cycle, D= t1 / t2 2.RthJA =350 oC/W 3.TJ-TA = P*RthJC(t) 4.RthJC(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 SINGLE PULSE RθJA = 350°C/W TA=25°C 1ms 10S DC 100ms 10ms 0.001 0.01 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25°C 3.RθJA = 350°C/W 4.Single Pulse Operation in This Area is Limited by R DS(ON) VGS(th) , Gate Threshold Voltage(V) TJ , Junction Temperature(˚C) Gate Threshold Voltage VS Temperature Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) r(t) , Normalized Effective Transient Thermal Resistance