PX5D8EA NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- ESD Protection − HBM Class : 1C.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications.
- Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±10 V Continuous Drain Current2 TA = 25 °C ID 0.8 A TA = 70 °C 0.62 Pulsed Drain Current1 IDM 2.4 A Power Dissipation TA = 25 °C PD 0.3 W TA = 70 °C 0.2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 400 °C / W 1Limited by maximum junction temperature. 2Limited by package. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.4 0.63 1 V(BR)DSS RDS(ON) ID 20V 300mΩ 0.8A
REV1.2 I-27-1 N-Channel Logic Level Enhancement Mode Field Effect Transistor PX5D8EA SOT-523 Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±30 A Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 0.5A 177 300 mΩ VGS = 2.5V, ID = 0.25A 226 400 VGS = 1.8V, ID = 0.2A 300 700 Forward Transconductance1 gfs VDS = 5V, ID = 0.5A 5 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz 60 pF Output Capacitance Coss 19 Reverse Transfer Capacitance Crss 10 Turn-On Delay Time2 td(on) VDD = 10V , ID 0.5A , VGS = 4.5V, RGEN = 5.1Ω nS Rise Time2 tr 36 Turn-Off Delay Time2 td(off) 86 Fall Time2 tf 173 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 0.25 A Forward Voltage1 VSD IF = 0.5A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 1A, dI/dt = 100 A/μs 111 nS Reverse Recovery Charge Qrr 102 uC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.2 I-27-1 N-Channel Logic Level Enhancement Mode Field Effect Transistor PX5D8EA SOT-523 Halogen-Free & Lead-Free NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=0.5A CISS COSS CRSS 0 5 10 15 20 25 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 ID=0.5A 25℃ 125℃ -20℃ 0.4 0.8 1.2 1.6 0 1 2 3 4 0.1 0.2 0.3 0.4 0.5 0 0.4 0.8 1.2 1.6 2 VGS=4.5V VGS=2.5V 0.4 0.8 1.2 1.6 0 0.5 1 1.5 2 2.5 3 VGS=4.5V VGS=2.5V VGS=1.8V VGS=1.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
REV1.2 I-27-1 N-Channel Logic Level Enhancement Mode Field Effect Transistor PX5D8EA SOT-523 Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A)