PW567EA NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- ESD Protection − HBM Class : 1C.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications.
- Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±12 V Continuous Drain Current2 TA = 25 °C ID -0.5 A TA = 70 °C -0.4 Pulsed Drain Current1 IDM -1 A Power Dissipation TA = 25 °C PD 0.25 W TA = 70 °C 0.16 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 500 °C / W 1Limited by maximum junction temperature. 2Limited by package. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.4 -0.96 -1.2 V(BR)DSS RDS(ON) ID -20V 520mΩ -0.5A
REV 1.2 I-27-1 P-Channel Logic Level Enhancement Mode Field Effect Transistor PW567EA SOT-723 Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage IGSS VDS = 0V, VGS = ±10V ±30 A Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 75 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -450mA 500 520 mΩ VGS = -2.5V, ID = -100mA 770 800 Forward Transconductance1 gfs VDS = -5V, ID = -450mA 1.6 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz 48 pF Output Capacitance Coss 18 Reverse Transfer Capacitance Crss 10 Turn-On Delay Time2 td(on) VDD = -10V , ID -450mA , VGS = -4.5V, RGEN = 5.1Ω 17 nS Rise Time2 tr 30 Turn-Off Delay Time2 td(off) 76 Fall Time2 tf 46 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -0.2 A Forward Voltage1 VSD IF = -450mA, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -1A, dI/dt = 100 A/μs 46 nS Reverse Recovery Charge Qrr 28 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.2 I-27-1 P-Channel Logic Level Enhancement Mode Field Effect Transistor PW567EA SOT-723 Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 25℃ 125℃ -20℃ 0.2 0.4 0.6 0.8 0 1 2 3 4 CISS COSS CRSS 0 5 10 15 20 25 0 1 2 3 4 5 ID=-0.45A 0.4 0.8 1.2 1.6 VGS=-4.5V VGS=-2.5V VGS=-1.8V 0.2 0.4 0.6 0.8 0 1 2 3 4 5 VGS=-4.5V VGS=-3V VGS=-2.5V VGS=-2V VGS=-1.8V C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Source-Drain Diode Forward Voltage -IS , Source Current(A) -VSD, Source-To-Drain Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic
REV 1.2 I-27-1 P-Channel Logic Level Enhancement Mode Field Effect Transistor PW567EA SOT-723 Halogen-Free & Lead-Free NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-0.45A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) On-Resistance VS Temperature