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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V Continuous Drain Current2,3 TC = 25 °C ID 112 A TC = 100 °C 71 Pulsed Drain Current1,2 I DM 200 Avalanche Current I AS 54 Avalanche Energy L = 0.1mH E AS 145 mJ Power Dissipation TC = 25 °C PD 104 W TC = 100 °C 41 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.2 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is 55A. 1.GATE 2.DRAIN 3.SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 40V 4mΩ 112A

REV 1.0 G-08-4 N-Channel Logic Level Enhancement Mode Field Effect Transistor PT6J6BA TO-220 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.6 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 R DS(ON) VGS = 10V, ID = 20A 3.2 4 mΩ VGS = 4.5V, ID = 15A 3.6 6.5 Forward Transconductance1 g fs V DS = 5V, ID = 20A 95 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 20V, f = 1MHz 3463 pFOutput Capacitance C oss 442 Reverse Transfer Capacitance C rss 298 Gate Resistance R g V GS = 0V, VDS = 0V ,f = 1MHz 1.25 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 20V, VGS = 10V, ID = 20A nC Qg(VGS=4.5V) 38 Gate-Source Charge2 Q gs 9.3 Gate-Drain Charge2 Q gd 17.5 Turn-On Delay Time2 t d(on) VDD = 40V ID  20A, VGS = 10V, RGEN = 6Ω nS Rise Time2 t r 22 Turn-Off Delay Time2 t d(off) 63 Fall Time2 t f 21 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 80 A Forward Voltage1 V SD I F = 20A,VGS = 0V 1.3 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 28.6 nS Reverse Recovery Charge Q rr 17 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Package limitation current is 55A.

REV 1.0 G-08-4 N-Channel Logic Level Enhancement Mode Field Effect Transistor PT6J6BA TO-220 Halogen-Free & Lead-Free NIKO-SEM 0 1 53 04 56 07 5 VDS=15V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 0.002 0.004 0.006 0.008 0.01 02468 1 0 ID=20A 0.001 0.002 0.003 0.004 0.005 0 1 02 03 04 05 0 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3 VGS=2.6V VGS=2.8V RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) C , Capacitance(pF) VGS , Gate-To-Source Voltage(V) 25℃ 125℃ -20℃ 012345 On-Resistance VS Gate-To-Source On-Resistance VS Drain Current ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics Transfer Characteristics VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Qg , Total Gate Charge(nC)

REV 1.0 G-08-4 N-Channel Logic Level Enhancement Mode Field Effect Transistor PT6J6BA TO-220 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 200 400 600 800 1000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.2 ˚C/W TC=25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.2˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V)