PT5C1BA NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±25 V Continuous Drain Current2 TC = 25 °C ID -106 A TC = 100 °C -67 Pulsed Drain Current1 IDM -200 Avalanche Current IAS -60 Avalanche Energy L = 0.1mH EAS 177 mJ Power Dissipation TC = 25 °C PD 125 W TC = 100 °C 50 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is -86A. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 5.6mΩ -106A 1. GATE 2. DRAIN 3. SOURCE

REV1.0 I-13-3 P-Channel Enhancement Mode Field Effect Transistor PT5C1BA TO-220 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.8 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) mΩ VGS = -10V, ID = -20A 4.8 5.6 Forward Transconductance1 gfs VDS = -5V, ID = -20A 80 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1MHz 6812 pF Output Capacitance Coss 821 Reverse Transfer Capacitance Crss 663 Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz 4.2 Ω Total Gate Charge2 Qg (VGS=-10V) VDS = -20V , VGS = -10V, ID = -20A 145 nC Qg(VGS=-4.5V) 74 Gate-Source Charge2 Qgs 21 Gate-Drain Charge2 Qgd 33 Turn-On Delay Time2 td(on) VDS = -20V , ID  -20A, VGS = -10V, RGEN =6Ω nS Rise Time2 tr 89 Turn-Off Delay Time2 td(off) 289 Fall Time2 tf 200 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS -96 A Forward Voltage1 VSD IF = -20A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -20A, dlF/dt = 100A / S 39 nS Reverse Recovery Charge Qrr 28 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Package limitation current is -86A.

REV1.0 I-13-3 P-Channel Enhancement Mode Field Effect Transistor PT5C1BA TO-220 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 25℃ 0 1 2 3 4 5 -20℃ 125℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 0.003 0.006 0.009 0.012 0.015 0 10 20 30 40 50 VGS=-10V VGS=-4.5V 0.003 0.006 0.009 0.012 0.015 2 4 6 8 10 ID=-20A 0 2 4 6 8 10 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3V VGS=-2.5V VGS=-2.7V

REV1.0 I-13-3 P-Channel Enhancement Mode Field Effect Transistor PT5C1BA TO-220 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 30 60 90 120 150 VDS=-20V ID=-20A 100 125℃ 25℃ 200 400 600 800 1000 1200 1400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TC =25˚C 3.RθJC = 1 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC