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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V Continuous Drain Current2 TC = 25 °C ID -121 A TC = 100 °C -76 Pulsed Drain Current1 I DM -200 Avalanche Current I AS -59 Avalanche Energy L = 0.1mH E AS 174 mJ Power Dissipation T C = 25 °C PD 125 W TC = 100 °C 50 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is -55A. PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -30V 5mΩ -121A 1. GATE 2. DRAIN 3. SOURCE

REV1.0 H-13-4 P-Channel Enhancement Mode Field Effect Transistor PT5B9BA TO-220 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -1 -1.6 -3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) mΩVGS = -10V, ID = -12A 3.5 5 Forward Transconductance1 g fs V DS = -5V, ID = -12A 50 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -15V, f = 1MHz 6624 pFOutput Capacitance C oss 1029 Reverse Transfer Capacitance C rss 844 Gate Resistance R g V GS =0V, VDS = 0V, f = 1MHz 4 Ω Total Gate Charge2 Qg (VGS=-10V) VDS = -15V , VGS = -10V, ID = -12A 141 nCQg(VGS=-4.5V) 71 Gate-Source Charge2 Q gs 17.5 Gate-Drain Charge2 Q gd 29 Turn-On Delay Time2 t d(on) VDS = -15V , ID  -12A, VGS = -10V, RGEN =6Ω nS Rise Time2 t r 59 Turn-Off Delay Time2 t d(off) 281 Fall Time2 t f 168 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S -112 A Forward Voltage1 V SD I F = -12A, VGS = 0V -1.3 V Reverse Recovery Time t rr IF = -12A, dlF/dt = 100A / S 40 nS Reverse Recovery Charge Q rr 29 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Package limitation current is -55A.

REV1.0 H-13-4 P-Channel Enhancement Mode Field Effect Transistor PT5B9BA TO-220 Halogen-Free & Lead-Free NIKO-SEM 0.003 0.006 0.009 0.012 0.015 2468 1 0 ID=-12A 0123456 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3V VGS=-2.8V VGS=-2.6V Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 012345 0.002 0.004 0.006 0.008 0.01 0 1 02 03 04 05 0 VGS=-10V VGS=-4.5V CISS COSS CRSS 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-12A c

REV1.0 H-13-4 P-Channel Enhancement Mode Field Effect Transistor PT5B9BA TO-220 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃125℃ 100 Gate charge Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 30 60 90 120 150 VDS=-15V ID=-12A 300 600 900 1200 1500 1800 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1˚C/W TC=25˚C single pulse Duty cycle=0.5 0.1 0.2 0.05 0.01 0.02 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC