PQ5L2JN NIKOSEM | Alldatasheet
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REV 1.2 I-21-4 Common Drain N-Channel Power MOSFET PQ5L2JN WLCSP Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 12V 3.85mΩ 18.6A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 12 V Gate-Source Voltage VGSS ±8 V Continuous Source Current IS 18.6 A Pulsed Source Current1 ISP 100 Total Dissipation2 PT 1.8 W Thermal Resistance2 RJA 67 °C / W Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C 1PW≤10μs, duty cycle≤1%. 2When mounted on 1in2 FR-4 board. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Source-Source Breakdown Voltage V(BR)SSS VGS = 0V, IS = 1mA 12 V Gate Threshold Voltage VGS(th) VSS = 10V , IS = 1mA 0.5 0.6 1.3 Gate-Source Leakage IGSS VSS = 0V, VGS = ±8V ±10 A VSS = 0V, VGS = ±5V ±2 A Zero Gate Voltage Source Current ISSS VSS = 10V, VGS = 0V 1 A Source-Source On-State Resistance1 RSS(ON) VGS = 4.5V, IS = 3A 2.3 2.95 3.85 mΩ VGS = 3.8V, IS = 3A 2.7 3.5 4.6 VGS = 3.1V, IS = 3A 2.8 3.9 6.3 VGS = 2.5V, IS = 3A 3.1 4.3 7.7 1. Source1 2. Gate1 3. Source1 4. Source2 5. Gate2 6. Source2 Top view Bottom view
REV 1.2 I-21-4 Common Drain N-Channel Power MOSFET PQ5L2JN WLCSP Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 6V, f = 1MHz 3293 pF Output Capacitance Coss 439 Reverse Transfer Capacitance Crss 274 Total Gate Chang2 Qg VSS = 6V , VGS = 4.5V IS = 3A 29 nC Turn-On Delay Time2 td(on) 34 nS Rise Time2 tr VSS = 6V, 46 Turn-Off Delay Time2 td(off) IS 3A, VGS = 4.5V 111 Fall Time2 tf 38 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Forward Source-Source Voltage1 VF IS = 3A, VGS = 0V 0.6 1.2 V 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.2 I-21-4 Common Drain N-Channel Power MOSFET PQ5L2JN WLCSP Halogen-Free & Lead-Free NIKO-SEM 0.003 0.006 0.009 0.012 0.015 ID=3A 0 0.2 0.4 0.6 0.8 1 VGS=4.5V VGS=3.8V VGS=3.1V VGS=2.5V VGS=1.8V VGS=1.2V VGS=1.1V 0.9 1.8 2.7 3.6 4.5 0 6 12 18 24 30 VDS=6V ID=3A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 0 3 6 9 12 15 25℃ 125℃ -20℃ 0 0.6 1.2 1.8 2.4 3 RSS(ON) -- VGS RSS(ON) , Source to Source ON Resistance(ohm) VGS, Gate to Source Voltage(V) RSS(ON) -- Ta ID -- VSS ID, Drain to Source Current(A) IS -- VGS IS , Source Current(A) VGS, Gate to Source Voltage(V) VSS, Source to Source Voltage(V) RSS(ON) , Source to Source ON Resistance(mohm) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VSS, Source to Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate to Source Voltage(V) VGS=4.5V, ID=3A VGS=3.8V, ID=3A VGS=3.1V, ID=3A VGS=2.5V, ID=3A 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -50 -25 0 25 50 75 100 125 150 175
REV 1.2 I-21-4 Common Drain N-Channel Power MOSFET PQ5L2JN WLCSP Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 Safe Operating Area IS , Source Current(A) VSS , Source to Source Voltage(V) IS -- VF VSS , Source to Source Voltage(V) IS , Source Current(A) DC 100ms 10ms 1ms 0.1 100 0.01 0.1 1 10 100 NOTE : 1.Ta=25˚C. 2.When mounted on 1in2 FR-4 board 3.Single Pulse. Operation in This Area is Limited by RDS(ON)