PQ5G4JN

PQ5G4JN NIKOSEM | Alldatasheet

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REV1.2 I-2-4 Common Drain N-Channel Power MOSFET PQ5G4JN WLCSP Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 24V 18mΩ 9A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 24 V Gate-Source Voltage VGSS ±12 V Continuous Source Current IS 9 A Pulsed Source Current1 ISP 60 Total Dissipation PT 1.6 W Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Source-Source Breakdown Voltage V(BR)SSS VGS = 0V, IS = 1mA 24 V Gate Threshold Voltage VGS(th) VSS = 10V , IS = 1mA 0.7 1.1 1.5 Gate-Source Leakage IGSS VSS = 0V, VGS = ±8V ±10 VSS = 0V, VGS = ±5V ±2 Zero Gate Voltage Source Current ISSS VSS = 20V , VGS = 0V 1 A Source-Source On-State Resistance1 RSS(ON) VGS = 4.5V, IS = 3A 10.8 15 18 mΩ VGS = 4V, IS = 3A 11.1 15.5 19 VGS = 3.7V, IS = 3A 11.5 16 20 VGS = 3.1V, IS = 3A 12.5 17.5 23.5 VGS = 2.5V, IS = 3A 14.9 21 30 1. Source1 2. Gate1 3. Gate2 4. Source2

REV1.2 I-2-4 Common Drain N-Channel Power MOSFET PQ5G4JN WLCSP Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VSS = 5V, IS = 3A 7.3 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 12V, f = 1MHz 1477 pF Output Capacitance Coss 201 Reverse Transfer Capacitance Crss 148 Total Gate Chang2 Qg VSS = 12V , VGS = 4.5V IS = 2A 16.7 nC Turn-On Delay Time2 td(on) 28 nS Rise Time2 tr VSS = 12V, 43 Turn-Off Delay Time2 td(off) IS  2A, VGS = 4.5V 49 Fall Time2 tf 29 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Forward Source-Source Voltage1 VF IS = 2A, VGS = 0V 0.77 1.2 V 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.2 I-2-4 Common Drain N-Channel Power MOSFET PQ5G4JN WLCSP Halogen-Free & Lead-Free NIKO-SEM VGS=4.5V, ID=3A VGS=4V, ID=3A VGS=3.7V, ID=3A VGS=3.1V, ID=3A VGS=2.5V, ID=3A 0.0 10.0 20.0 30.0 40.0 50.0 -50 -25 0 25 50 75 100 125 150 175 25℃ 125℃ -20℃ 0 0.6 1.2 1.8 2.4 3 0 4 8 12 16 20 VDS=12V ID=2A CISS COSS CRSS 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 0.02 0.04 0.06 0.08 0.1 ID=3A 0 1 2 3 4 VGS=4.5V VGS=4V VGS=3.7V VGS=3.1V VGS=2.5V VGS=1.7V VGS=1.6V ID -- VSS ID, Drain to Source Current(A) IS -- VGS IS , Source Current(A) VGS, Gate to Source Voltage(V) VSS, Source to Source Voltage(V) RSS(ON) , Source to Source ON Resistance(mohm) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VSS, Source to Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate to Source Voltage(V) RSS(ON) -- Ta RSS(ON) -- VGS RSS(ON) , Source to Source ON Resistance(ohm) VGS, Gate to Source Voltage(V)

REV1.2 I-2-4 Common Drain N-Channel Power MOSFET PQ5G4JN WLCSP Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 IS -- VF VSS , Source to Source Voltage(V) IS , Source Current(A) Safe Operating Area IS , Source Current(A) VSS , Source to Source Voltage(V) DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.Ta=25˚C. 2.When mounted on 1in2 FR-4 board 3.Single Pulse. Operation in This Area is Limited by RDS(ON)