PP5S6JB NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • ESD Protection - HBM Class : 2.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications.
  • Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±12 V Continuous Drain Current2 TA = 25 °C ID 0.87 A TA = 70 °C 0.7 Pulsed Drain Current1 IDM 1.8 A Power Dissipation3 TA = 25 °C PD 0.69 W TA = 70 °C 0.44 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t ≦10s RJA 180 °C / W Steady-State 225 1Limited by maximum junction temperature. 2Limited by package. 3The Power dissipation is based on RJA t ≦10s value. V(BR)DSS RDS(ON) ID 30V 450mΩ 0.87A G: GATE D: DRAIN S: SOURCE

REV1.0 M-20-4 Dual N-Channel Enhancement Mode Field Effect Transistor PP5S6JB PDFN 1.0x1.0 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.4 0.8 1.2 Gate-Body Leakage IGSS VDS = 0V, VGS = ±10V ±30 A Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance4 RDS(ON) VGS = 4.5V, ID = 0.5A 283 450 mΩ VGS = 4V, ID = 0.5A 293 470 VGS = 2.5V, ID = 0.25A 360 700 Forward Transconductance4 gfs VDS = 5V, ID = 0.5A 2.2 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz pF Output Capacitance Coss 19 Reverse Transfer Capacitance Crss 9.9 Total Gate Charge5 Qg VDS = 15V , VGS =4.5V, ID = 1A nC Gate-Source Charge5 Qgs 0.14 Gate-Drain Charge5 Qgd 0.35 Turn-On Delay Time5 td(on) VDD = 15V , ID  1A , VGS = 4.5V, RGEN = 6Ω nS Rise Time5 tr 31 Turn-Off Delay Time5 td(off) 102 Fall Time5 tf 58 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 0.57 A Forward Voltage4 VSD IF = 0.5A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 1A, dI/dt = 100 A/μs 65 nS Reverse Recovery Charge Qrr 38 nC 4Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 5Independent of operating temperature.

REV1.0 M-20-4 Dual N-Channel Enhancement Mode Field Effect Transistor PP5S6JB PDFN 1.0x1.0 Halogen-Free & Lead-Free NIKO-SEM 25℃ 125℃ -20℃ 0.3 0.6 0.9 1.2 1.5 0 0.4 0.8 1.2 1.6 2 0.3 0.6 0.9 1.2 1.5 0 0.6 1.2 1.8 2.4 3 VGS=4.5V VGS=4V VGS=2.5V VGS=1.5V VGS=1.7V VGS=1.3V 0.2 0.4 0.6 0.8 VGS=4V VGS=4.5V VGS=2.5V 0.2 0.4 0.6 0.8 ID=0.5A Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=0.5A CISS COSS CRSS 0 5 10 15 20 25 30

REV1.0 M-20-4 Dual N-Channel Enhancement Mode Field Effect Transistor PP5S6JB PDFN 1.0x1.0 Halogen-Free & Lead-Free NIKO-SEM 0.9 1.8 2.7 3.6 4.5 VDS=15V ID=0.5A VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage Gate charge Characteristics Characteristics IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) 150℃ 25℃ 0.1 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 225 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.6 1.2 1.8 2.4 0.001 0.01 0.1 1 10 100 1000 Single Pulse RθJA = 225 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS = 4.5V 2.TC =25˚C 3.RθJA = 225 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)