PP5G7JB NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- ESD Protection
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications.
- Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±12 V Continuous Drain Current2 TA = 25 °C ID -0.56 A TA = 70 °C -0.44 Pulsed Drain Current1 IDM -1 A Power Dissipation3 TA = 25 °C PD 0.54 W TA = 70 °C 0.34 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t ≦10s RJA 230 °C / W Steady-State 275 1Limited by maximum junction temperature. 2Limited by package. 3The Power dissipation is based on RJA t ≦10s value. V(BR)DSS RDS(ON) ID -30V 0.95Ω -0.56A G: GATE D: DRAIN S: SOURCE
REV 1.0 M-12-4 Dual P-Channel Enhancement Mode Field Effect Transistor PP5G7JB PDFN 1.0x1.0 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.5 -0.96 -1.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±10V ±30 A Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance4 RDS(ON) VGS = -4.5V, ID = -380mA 0.7 0.95 Ω VGS = -2.5V, ID = -100mA 0.97 1.4 Forward Transconductance4 gfs VDS = -5V, ID = -380mA 1 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 51 pF Output Capacitance Coss 18 Reverse Transfer Capacitance Crss 9.2 Total Gate Charge5 Qg VGS = -4.5V , VDS = -15V, ID = -1A 0.93 nC Gate-Source Charge5 Qgs 0.33 Gate-Drain Charge5 Qgd 0.19 Turn-On Delay Time5 td(on) VDD = -15V , ID -380mA , VGS = -4.5V, RGEN = 6Ω nS Rise Time5 tr 28 Turn-Off Delay Time5 td(off) 64 Fall Time5 tf 46 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -0.45 A Forward Voltage4 VSD IF = -380mA, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -1A, dI/dt = 100 A/μs 26 nS Reverse Recovery Charge Qrr 4 nC 4Pulse test : Pulse Width 300 sec, Duty Cycle 2％. Independent of operating temperature.
REV 1.0 M-12-4 Dual P-Channel Enhancement Mode Field Effect Transistor PP5G7JB PDFN 1.0x1.0 Halogen-Free & Lead-Free NIKO-SEM C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS, Gate-To-Source Voltage(V) Capacitance Characteristic -VDS, Drain-To-Source Voltage(V) Source-Drain Diode Forward Voltage -IS , Source Current(A) -VSD, Source-To-Drain Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 25℃ 125℃ -20℃ 0.2 0.4 0.6 0.8 0 1 2 3 4 0.2 0.4 0.6 0.8 0 1 2 3 4 VGS=-2V VGS=-2.5V VGS=-4.5V VGS=-1.7V 0.6 1.2 1.8 2.4 0 0.4 0.8 1.2 1.6 2 VGS=-4.5V VGS=-2.5V 0.6 1.2 1.8 2.4 ID=-380mA CISS COSS CRSS 0 5 10 15 20 25 30 150℃ 25℃ 0.1 -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) Transfer Characteristics Output Characteristics
REV 1.0 M-12-4 Dual P-Channel Enhancement Mode Field Effect Transistor PP5G7JB PDFN 1.0x1.0 Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) On-Resistance VS Temperature Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Power(W) 0.9 1.8 2.7 3.6 4.5 0 0.2 0.4 0.6 0.8 1 VDS=-15V ID=-1A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-380mA 0.6 1.2 1.8 2.4 0.001 0.01 0.1 1 10 100 1000 Single Pulse RθJA = 275 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS = -4.5V 2.TC =25˚C 3.RθJA = 275 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 275 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA