PP4E06BD NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
REV1.0 L-12-3 N-Channel Enhancement Mode Field Effect Transistor PP4E06BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 101 A TC = 100 °C 71 Pulsed Drain Current1 IDM 250 Avalanche Current IAS 34 Avalanche Energy L = 0.1mH EAS 59 mJ Power Dissipation TC = 25 °C PD 100 W TC = 100 °C 50 Junction & Storage Temperature Range TJ, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 2 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V 1 VDS = 60V, VGS = 0V, TJ = 125 °C 100 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 6.3 8 mΩ VGS = 10V , ID = 10A 4 4.9 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 4.9mΩ 101A G D S
REV1.0 L-12-3 N-Channel Enhancement Mode Field Effect Transistor PP4E06BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 10A 52 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1MHz 2252 pF Output Capacitance Coss 1141 Reverse Transfer Capacitance Crss 37 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.6 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 10A nC Qg(VGS=4.5V) 18 Gate-Source Charge2 Qgs 7.2 Gate-Drain Charge2 Qgd 5.1 Turn-On Delay Time2 td(on) VDS = 30V ID 10A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 26 Turn-Off Delay Time2 td(off) 36 Fall Time2 tf 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 83 A Forward Voltage1 VSD IF = 10A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 38 nS Reverse Recovery Charge Qrr 27 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 L-12-3 N-Channel Enhancement Mode Field Effect Transistor PP4E06BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 25℃ 125℃ -20℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 VGS=10V ID=10A CISS COSS CRSS 100 1000 10000 0 12 24 36 48 60 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0.005 0.01 0.015 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.005 0.01 0.015 0.02 2 4 6 8 10 ID=10A
REV1.0 L-12-3 N-Channel Enhancement Mode Field Effect Transistor PP4E06BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0 8 16 24 32 40 VDS=30V ID=10A 0.1 100 25℃ 150℃ 350 700 1050 1400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.5 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 1.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)