PP2H06BK NIKOSEM | Alldatasheet
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REV 1.0 M-30-2 N-Channel Enhancement Mode Field Effect Transistor PP2H06BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 131 A TC = 100 °C 93 Pulsed Drain Current1 IDM 166 Continuous Drain Current TA = 25 °C ID TA = 70 °C 19 Avalanche Current IAS 54 Avalanche Energy L = 0.1mH EAS 145 mJ Power Dissipation TC = 25 °C PD 107 W TC = 100 °C 53 Power Dissipation3 TA = 25 °C PD 3.3 W TA = 70 °C 2.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 45 °C / W Junction-to-Ambient2 Steady-State RJA 65 Junction-to-Case Steady-State RJC 1.4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 2.8mΩ 131A G D S
REV 1.0 M-30-2 N-Channel Enhancement Mode Field Effect Transistor PP2H06BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.6 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =60V, VGS = 0V 1 VDS = 60V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A 2.2 2.8 mΩ VGS = 4.5V, ID = 20A 3.3 4.4 Forward Transconductance1 gfs VDS = 5V, ID = 20A 86 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1MHz 3355 pF Output Capacitance Coss 1569 Reverse Transfer Capacitance Crss 45 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Qg VGS = 10V VDS = 30V , VGS = 10V, ID = 20A nC VGS = 4.5V 29 Gate-Source Charge2 Qgs 7.7 Gate-Drain Charge2 Qgd 11.5 Turn-On Delay Time2 td(on) VDS = 30V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 19 Turn-Off Delay Time2 td(off) 47 Fall Time2 tf 68 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 89 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 88 nS Reverse Recovery Charge Qrr 80 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 M-30-2 N-Channel Enhancement Mode Field Effect Transistor PP2H06BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.6V VGS=2.7V 0.001 0.002 0.003 0.004 0.005 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.003 0.006 0.009 0.012 0.015 2 4 6 8 10 ID=20A CISS COSS CRSS 100 1000 10000 0 12 24 36 48 60 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A
REV 1.0 M-30-2 N-Channel Enhancement Mode Field Effect Transistor PP2H06BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation Power(W) ID , Drain Current(A) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) T1 , Square Wave Pulse Duration(S) 0 12 24 36 48 60 VDS=50V ID=20A 150℃ 25℃ 0.1 100 1000 100 150 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 65 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 65 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 65 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA
REV 1.0 M-30-2 N-Channel Enhancement Mode Field Effect Transistor PP2H06BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Power(W) ID , Drain Current(A) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) T1 , Square Wave Pulse Duration(S) ID , Drain Current(A) 300 600 900 1200 1500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.4 ˚C/W TC = 25˚C 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 1.4 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC