PP1410AD NIKOSEM | Alldatasheet
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REV 1.1 L-23-2 N-Channel Enhancement Mode Field Effect Transistor PP1410AD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 32 Pulsed Drain Current1 IDM 150 Avalanche Current IAS 12.4 Avalanche Energy L = 1mH EAS 76.8 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 33 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 Steady-State RJA 62.5 °C / W Junction-to-Case Steady-State RJC 2.3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3.1 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 14mΩ 45A G D S 1.GATE 2.DRAIN 3.SOURCE
REV 1.1 L-23-2 N-Channel Enhancement Mode Field Effect Transistor PP1410AD TO-252 Halogen-Free & Lead-Free NIKO-SEM Zero Gate Voltage Drain Current IDSS VDS =100V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A 10 14 mΩ Forward Transconductance1 gfs VDS = 5V, ID = 4A 15 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 1495 pF Output Capacitance Coss 278 Reverse Transfer Capacitance Crss 12 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.6 Ω Total Gate Charge2 Qg VDS = 50V , VGS = 10V, ID = 20A nC Gate-Source Charge2 Qgs 5.8 Gate-Drain Charge2 Qgd 8.8 Turn-On Delay Time2 td(on) VDS = 50V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 24 Turn-Off Delay Time2 td(off) 27 Fall Time2 tf 28 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 45 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 43 nS Reverse Recovery Charge Qrr 50 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.1 L-23-2 N-Channel Enhancement Mode Field Effect Transistor PP1410AD TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=10V 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 ID=20A 25℃ 0 2 4 6 8 125℃ -20℃ 0.0 0.6 1.2 1.8 2.4 3.0 -50 -25 0 25 50 75 100 125 150 175 VGS=10V ID=20A CISS COSS CRSS 100 1000 10000 0 20 40 60 80 100
REV 1.1 L-23-2 N-Channel Enhancement Mode Field Effect Transistor PP1410AD TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0 6 12 18 24 30 VDS=50V ID=20A 300 600 900 1200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.3 ˚C/W TC = 25˚C 0.1 100 25℃ 150℃ DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)