PM606BA

PM606BA NIKOSEM | Alldatasheet

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REV 1.0 D-45-1 N-Channel Enhancement Mode Field Effect Transistor PM606BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C 3.7 Pulsed Drain Current1 IDM 15 Power Dissipation TA = 25 °C PD 0.8 W TA = 70 °C 0.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 146 °C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 5A 23 31 mΩ VGS = 10V, ID = 5A 17 20 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 20mΩ 5A

REV 1.0 D-45-1 N-Channel Enhancement Mode Field Effect Transistor PM606BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 5A 26 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 329 pF Output Capacitance Coss 70 Reverse Transfer Capacitance Crss 45 Total Gate Charge2 Qg VDS = 15V , VGS = 10V, ID = 5A 7.8 nC Gate-Source Charge2 Qgs 1.2 Gate-Drain Charge2 Qgd 2.3 Turn-On Delay Time2 td(on) 17 nS Rise Time2 tr VDS = 15V , 17 Turn-Off Delay Time2 td(off) ID  5A, VGS = 10V, RGEN =6Ω 37 Fall Time2 tf 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 0.7 A Forward Voltage1 VSD IF = 5A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / S 10 nS Reverse Recovery Charge Qrr 2.6 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 D-45-1 N-Channel Enhancement Mode Field Effect Transistor PM606BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM 0 2 4 6 8 10 VDS=15V ID=5A Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=3.5V VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=3V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A 25℃ 150℃ 0.1 CISS COSS CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)

REV 1.0 D-45-1 N-Channel Enhancement Mode Field Effect Transistor PM606BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 146˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 146˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 146 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA ID , Drain Current(A) Power(W) Single Pulse Time(s) T1 , Square Wave Pulse Duration[sec]