PM515BA NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current TA = 25 °C ID -3.8 A TA = 70 °C -3 Pulsed Drain Current1 IDM -20 Power Dissipation3 TA = 25 °C PD 1.3 W TA = 70 °C 0.88 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 90 °C / W Junction-to-Ambient2 Steady-State RJA 131 1limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 65mΩ -3.8A G: GATE D: DRAIN S: SOURCE
P-Channel Enhancement Mode Field Effect Transistor PM515BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM REV 1.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.3 -0.5 -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 A VDS = -10V, VGS = 0V, TJ = 70 °C -10 Drain-Source On-State Resistance1 RDS(on) VGS = -1.8V, ID = -1A 91 120 mΩ VGS = -2.5V, ID = -2A 70 85 VGS = -4.5V, ID = -2.5A 56 65 Forward Transconductance1 gfs VDS = -5V, ID = -2.5A 11 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz 561 pF Output Capacitance Coss 65 Reverse Transfer Capacitance Crss 53 Total Gate Charge2 Qg VDS = -10V, ID = -2.5A,VGS = -4.5V 7.3 nC Gate-Source Charge2 Qgs 1 Gate-Drain Charge2 Qgd 2 Turn-On Delay Time2 td(on) VDS = -10V ID -2.5 A VGS = -4.5V, RGEN =6Ω nS Rise Time2 tr 38 Turn-Off Delay Time2 td(off) 53 Fall Time2 tf 60 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -0.75 A Forward Voltage1 VSD IF = -2.5A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -2.5A, dlF/dt = 100A / S 10 nS Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
P-Channel Enhancement Mode Field Effect Transistor PM515BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM REV 1.1 CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 25℃ 125℃ 0 1 2 3 4 5 0.04 0.08 0.12 0.16 0.2 ID=-2.5A 0.04 0.08 0.12 0.16 0.2 0 3 6 9 12 15 VGS=-4.5V VGS=-2.5V 0 1 2 3 4 5 6 VGS=-4.5V VGS=-3.8V VGS=-3.5V VGS=-2.5V VGS=-1.8V Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-2.5A
P-Channel Enhancement Mode Field Effect Transistor PM515BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM REV 1.1 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 131 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -4.5V 2.TA=25˚C 3.RθJA = 131˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 131˚C/W TA=25˚C 25℃ 125℃ 100 0 2 4 6 8 10 VDS=-10V ID=-2.5A Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]