PM514BA NIKOSEM | Alldatasheet

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REV 1.0 E-35-2 N-Channel Enhancement Mode Field Effect Transistor PM514BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±8 V Continuous Drain Current TA = 25 °C ID 3.3 A TA = 70 °C 2.7 Pulsed Drain Current1 IDM 12 Power Dissipation TA = 25 °C PD 0.7 W TA = 70 °C 0.4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 170 °C/W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.5 0.7 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 1.8V, ID = 2.5A 55 80 mΩ VGS = 2.5V, ID = 2.8A 36 50 VGS = 4.5V, ID = 3A 29 40 Forward Transconductance1 gfs VDS = 5V, ID = 3A 16 S PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 40mΩ 3.3A G D S G. GATE D. DRAIN S. SOURCE

REV 1.0 E-35-2 N-Channel Enhancement Mode Field Effect Transistor PM514BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz 331 pF Output Capacitance Coss 56 Reverse Transfer Capacitance Crss 44 Total Gate Charge2 Qg VDS = 10V , VGS =4.5V, ID = 3A nC Gate-Source Charge2 Qgs 0.6 Gate-Drain Charge2 Qgd 1.7 Turn-On Delay Time2 td(on) 30 nS Rise Time2 tr VDD = 10V, 30 Turn-Off Delay Time2 td(off) ID  3A, VGEN = 4.5V, RG = 6Ω 90 Fall Time2 tf 31 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 0.7 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1 V Reverse Recovery Time trr IF = 3A, dlF/dt = 100A / S 10 nS Reverse Recovery Charge Qrr 2 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 E-35-2 N-Channel Enhancement Mode Field Effect Transistor PM514BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 VGS=6.5V VGS=5.5V VGS=4.5V VGS=3.5V VGS=2.5V VGS=1.5V VGS=1.8V 0 1 2 3 4 5 VDS=10V ID=3A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=3A 25℃ 150℃ 0.1 ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics C , Capacitance(pF)

REV 1.0 E-35-2 N-Channel Enhancement Mode Field Effect Transistor PM514BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA=25˚C 3.RθJA = 170˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 170 ˚C/W TA=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 170 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA T1 , Square Wave Pulse Duration[sec]