PM513BA NIKOSEM | Alldatasheet

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P-Channel Enhancement Mode Field Effect Transistor PM513BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C -2.4 Pulsed Drain Current1 IDM -20 Power Dissipation TA = 25 °C PD 0.9 W TA = 70 °C 0.6 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 130 °C / W 1limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.3 -0.5 -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 A VDS = -10V, VGS = 0V, TJ = 70 °C -10 Drain-Source On-State Resistance1 RDS(on) VGS = -1.8V, ID = -1A 140 190 mΩ VGS = -2.5V, ID = -2A 109 130 VGS = -4.5V, ID = -2.5A 80 100 On-State Drain Current1 ID(ON) VDS =-5V, VGS = -4.5V -20 A Forward Transconductance1 gfs VDS = -5V, ID = -2.5A 8.1 S PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 100mΩ -3A 1: GATE 2: DRAIN 3: SOURCE G S D

P-Channel Enhancement Mode Field Effect Transistor PM513BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM REV 1.0 DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz 434 pF Output Capacitance Coss 56 Reverse Transfer Capacitance Crss 54 Total Gate Charge2 Qg VDS = -10V, ID = -2.5A,VGS = -4.5V 6.3 nC Gate-Source Charge2 Qgs 0.7 Gate-Drain Charge2 Qgd 2 Turn-On Delay Time2 td(on) VDS = -10V ID  -2.5 A VGS = -4.5V, RGEN =6Ω 9.4 nS Rise Time2 tr 38 Turn-Off Delay Time2 td(off) 60 Fall Time2 tf 66 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -3 A Forward Voltage1 VSD IF = -2.5A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -2.5A, dlF/dt = 100A / S 11 nS Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

P-Channel Enhancement Mode Field Effect Transistor PM513BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM REV 1.0 0.1 0.2 0.3 0.4 0.5 0 3 6 9 12 VGS=-4.5V VGS=-2.5V VGS=-1.8V 0.05 0.07 0.09 0.11 0.13 0.15 ID=-2.5A -VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage -VGS, Gate-To-Source Voltage(V) 0 2 4 6 8 VDS=10V ID=2.5A 0 0.8 1.6 2.4 3.2 4 VGS=-7.5V VGS=-6.5V VGS=-5.5V VGS=-4.5V VGS=-3.5V VGS=-2.5V VGS=-1.8V 25℃ 125℃ 0 0.5 1 1.5 2 2.5 3 CISS COSS CRSS 100 200 300 400 500 0 5 10 15 20 25 30 Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM)

P-Channel Enhancement Mode Field Effect Transistor PM513BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM REV 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=2.5A DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 130˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 125℃ 100 -VSD, Source-To-Drain Voltage(V) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 130˚C/W single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 130 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] On-Resistance VS Temperature