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REV 1.1 G-28-1 P-Channel Enhancement Mode Field Effect Transistor PM509BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM G S D ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C -1.5 Pulsed Drain Current1 I DM -8 Power Dissipation TA = 25 °C PD 0.7 W TA = 70 °C 0.4 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 177 °C/W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -1 -1.7 -3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 55 °C -10 On-State Drain Current1 I D(ON) V DS = -10V, VGS = -10V -8 A Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -1.5A 134 180 mΩ VGS =-10V, ID = -2A 98 120 PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -30V 120mΩ -2A G. GATE D. DRAIN S. SOURCE

REV 1.1 G-28-1 P-Channel Enhancement Mode Field Effect Transistor PM509BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 g fs V DS = -5V, ID = -2A 4.3 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -15V, f = 1MHz 190 pFOutput Capacitance C oss 36 Reverse Transfer Capacitance C rss 27 Total Gate Charge2 Q g VDS = -15V , VGS =-10V, ID = -2A 4.8 nCGate-Source Charge2 Q gs 0.5 Gate-Drain Charge2 Q gd 1.3 Turn-On Delay Time2 t d(on) 14 nS Rise Time2 t r V DD = -15V, VGS = -10V 36 Turn-Off Delay Time2 t d(off) ID  -2A, RG = 6Ω 42 Fall Time2 t f 34 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S -2 A Forward Voltage1 V SD I F = -2A, VGS = 0V -1.1 V Reverse Recovery Time t rr IF = -2A, dlF/dt = 100A / S 15 nS Reverse Recovery Charge Qrr 8 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.1 G-28-1 P-Channel Enhancement Mode Field Effect Transistor PM509BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 100 150 200 250 0 7 14 21 28 35 0.1 0.2 0.3 0.4 0.5 2468 1 0 ID=-2A 0.1 0.2 0.3 0.4 0.5 02468 1 0 VGS=-10V VGS=-4.5V 0 0.6 1.2 1.8 2.4 3 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-3.5V VGS=-4.5V VGS=-3V 25℃ 125℃ -20℃ 012345 012345 VDS=-15V ID=-2A C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) Out put Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance CharacteristicGate charge Characteristics

REV 1.1 G-28-1 P-Channel Enhancement Mode Field Effect Transistor PM509BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 177 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 177 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 177 ˚C/W TA=25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-2A 25℃ 125℃ 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Power(W) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance