PM506BA NIKOSEM | Alldatasheet
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REV1.0 E-43-2 N-Channel Enhancement Mode Field Effect Transistor PM506BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID 3.5 A TA = 70 °C 2.8 Pulsed Drain Current1 IDM 20 Power Dissipation3 TA = 25 °C PD 1.3 W TA = 70 °C 0.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATING THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 90 °C / W Junction-to-Ambient2 Steady-State RJA 160 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.8 1.5 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 3A 44 60 mΩ VGS = 4.5V, ID = 1.5A 68 100 1: GATE 2: DRAIN 3: SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 60mΩ 3.5A G D S
REV1.0 E-43-2 N-Channel Enhancement Mode Field Effect Transistor PM506BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 3A 6 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 206 pF Output Capacitance Coss 36 Reverse Transfer Capacitance Crss 25 Total Gate Charge2 Qg(VGS=10V) VDS =15V, ID = 3A nC Qg(VGS=4.5V) 2.9 Gate-Source Charge2 Qgs 0.8 Gate-Drain Charge2 Qgd 1.7 Turn-On Delay Time2 td(on) VDD = 15V, ID 3A, VGS = 10V, RGEN = 6Ω nS Rise Time2 tr 13 Turn-Off Delay Time2 td(off) 37 Fall Time2 tf 9 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current2 IS 0.8 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1.5 V Reverse Recovery Time trr IF = 3A, dlF/dt = 100A / S VGS = 0V 11.5 nS Reverse Recovery Charge Qrr 3.5 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 E-43-2 N-Channel Enhancement Mode Field Effect Transistor PM506BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 VGS=10V VGS=4.5V 0.02 0.03 0.04 0.05 0.06 0.07 0.08 2 4 6 8 10 ID=3A CISS COSS CRSS 100 150 200 250 0 5 10 15 20 25 30 0 1 2 3 4 5 VDS=15V ID=3A
REV1.0 E-43-2 N-Channel Enhancement Mode Field Effect Transistor PM506BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=3A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 160˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 160˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 160 ℃/W 3.TJ-TA = P*RthJC(t) 4.RthJA(t) = r(t)*RthJC