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REV1.0 G-23-3 P-Channel Enhancement Mode Field Effect Transistor PM503BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM G S D ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±12 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C -1.5 Pulsed Drain Current1 I DM 10 Power Dissipation TA = 25 °C PD 0.7 W TA = 70 °C 0.5 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 160 °C/W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -0.4 -0.95 -1.4 Gate-Body Leakage I GSS V DS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -2.5V, ID = -1.5A 153 220 mΩVGS = -4.5V, ID = -1.5A 106 150 VGS =-10V, ID = -2A 91 115 PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -30V 115mΩ -2A G. GATE D. DRAIN D. SOURCE

REV1.0 G-23-3 P-Channel Enhancement Mode Field Effect Transistor PM503BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 g fs V DS = -5V, ID = -2A 6 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -15V, f = 1MHz 258 pFOutput Capacitance C oss 35 Reverse Transfer Capacitance C rss 25 Total Gate Charge2 Q g VDS = -15V , VGS =-10V, ID = -2A 6.5 nCGate-Source Charge2 Q gs 0.5 Gate-Drain Charge2 Q gd 1.2 Turn-On Delay Time2 t d(on) 14 nS Rise Time2 t r V DD = -15V, VGS = -10V 37 Turn-Off Delay Time2 t d(off) ID  -2A, RG = 6Ω 43 Fall Time2 t f 34 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S -0.6 A Forward Voltage1 V SD I F = -2A, VGS = 0V -1.1 V Reverse Recovery Time t rr IF = -2A, dlF/dt = 100A / S 9.8 nS Reverse Recovery Charge Qrr 2.5 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 G-23-3 P-Channel Enhancement Mode Field Effect Transistor PM503BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM 0.1 0.2 0.3 0.4 0369 1 2 1 5 VGS=-10V VGS=-4.5V VGS=-2.5V 012345 VGS=-10V VGS=‐9V VGS=‐8V VGS=‐7V VGS=‐6V VGS=‐5V VGS=‐4.5V VGS=-2.5V VGS=-2V VGS=-3V 0.1 0.2 0.3 0.4 0.5 02468 1 0 ID=-2A 02468 1 0 VDS=-15V ID=-2A CISS COSS CRSS 100 150 200 250 300 350 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 01234 C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) Out put Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance CharacteristicGate charge Characteristics

REV1.0 G-23-3 P-Channel Enhancement Mode Field Effect Transistor PM503BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 160 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 160 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 160 ˚C/W TA=25˚C 25℃125℃ 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-2A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Power(W) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance