PKCS0BB NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current4 TC = 25 °C ID 128 A TC = 100 °C 81 Pulsed Drain Current1 IDM 220 Continuous Drain Current TA = 25 °C ID TA = 70 °C 28 Avalanche Current IAS 71 Avalanche Energy L = 0.1mH EAS 252 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 21 Power Dissipation3 TA = 25 °C PD 4.1 W TA = 70 °C 2.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 1.5mΩ 128A
REV 1.0 I-50-1 N-Channel Enhancement Mode Field Effect Transistor PKCS0BB PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 30 °C / W Junction-to-Ambient2 Steady-State RJA 47 Junction-to-Case Steady-State RJC 2.3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4The maximum current rating is package limited. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 16A 1.5 2.1 mΩ VGS = 10V, ID = 20A 1.1 1.5 Forward Transconductance1 gfs VDS = 5V, ID = 20A 84 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1MHz 6072 pF Output Capacitance Coss 694 Reverse Transfer Capacitance Crss 377 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.6 Ω Total Gate Charge2 Qg VGS = 10V VDS = 20V , VGS = 10V, ID = 20A 109 nC VGS = 4.5V 55 Gate-Source Charge2 Qgs 18 Gate-Drain Charge2 Qgd 22 Turn-On Delay Time2 td(on) VDS = 20V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 79 Turn-Off Delay Time2 td(off) 167 Fall Time2 tf 119
REV 1.0 I-50-1 N-Channel Enhancement Mode Field Effect Transistor PKCS0BB PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 41 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 37 nS Reverse Recovery Charge Qrr 28 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 I-50-1 N-Channel Enhancement Mode Field Effect Transistor PKCS0BB PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.7V VGS=2.5V 0.001 0.002 0.003 0.004 0.005 2 4 6 8 10 ID=20A 0.001 0.002 0.003 0.004 0.005 0 6 12 18 24 30 VGS=10V VGS=4.5V 0 1 2 3 4 5 25℃ 125℃ -20℃ 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 30
REV 1.0 I-50-1 N-Channel Enhancement Mode Field Effect Transistor PKCS0BB PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) 0 30 60 90 120 VDS=20V ID=20A 0.1 100 150℃ 25℃ single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 47 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 120 160 200 240 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 47 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.01 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 47 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)
REV 1.0 I-50-1 N-Channel Enhancement Mode Field Effect Transistor PKCS0BB PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 400 800 1200 1600 2000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.3 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)