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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications
  • Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V DS 30 30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 99 34 A TC = 100 °C 63 21 Pulsed Drain Current1 I DM 150 70 Continuous Drain Current TA = 25 °C ID 25 9.2 TA = 70 °C 20 7.3 Avalanche Current I AS 52 22 Avalanche Energy L = 0.1mH E AS 135 24 mJ Power Dissipation TC = 25 °C PD 36 24 W TC = 100 °C 14.7 9.6 Power Dissipation TA = 25 °C PD 2.4 1.7 W TA = 70 °C 1.5 1.1 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2 PRODUCT SUMMARY V (BR)DSS R DS(ON) ID Q2 30V 1.9mΩ 99A Q1 30V 9.5mΩ 34A

REV1.0 G-19-4 Dual N-Channel Enhancement Mode Field Effect Transistor PKC46DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA Q2 52 °C / W RJA Q1 72 Junction-to-Case RJC Q2 3.4 RJC Q1 5.2 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=35A,Q2=35A. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A Q2 30 V Q1 30 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V Q2 1 Q1 1 VDS = 20V, VGS = 0V, TJ = 55 °C Q2 10 Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 16A Q2 2.1 2.5 mΩ VGS =4.5V, ID = 13A Q1 10.5 14 VGS = 10V, ID = 20A Q2 1.5 1.9 VGS = 10V, ID = 13A Q1 6.7 9.5 Forward Transconductance1 g fs VDS = 5V, ID = 20A Q2 72 S VDS = 5V, ID = 10A Q1 37

REV1.0 G-19-4 Dual N-Channel Enhancement Mode Field Effect Transistor PKC46DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz Q2 2868 pF Q1 525 Output Capacitance C oss Q2 515 Q1 146 Reverse Transfer Capacitance C rss Q2 315 Q1 70 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz Q2 1.1 Ω Q1 1.1 Total Gate Charge2 Q g VGS = 10V VDS = 15V , ,ID = 20A VDS = 15V , ID = 13A Q2 56 nC Q1 10.5 VGS = 4.5V Q2 29 Q1 5.8 Gate-Source Charge2 Q gs Q2 8.3 Q1 1.5 Gate-Drain Charge2 Q gd Q2 14 Q1 3.1 Turn-On Delay Time2 t d(on) VDS = 15V , ID  20A, VGS = 10V, RGEN =6Ω VDS = 15V , ID  13A, VGS = 10V, RGEN =6Ω Q2 25 nS Q1 11 Rise Time2 t r Q2 18 Q1 10 Turn-Off Delay Time2 t d(off) Q2 54 Q1 7 Fall Time2 t f Q2 20 Q1 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S Q2 36 A Q1 20 Forward Voltage1 V SD IF = 20A, VGS = 0V Q2 1 V IF = 13A, VGS = 0V Q1 1.2 Reverse Recovery Time t rr Q2 IF = 20A, dlF/dt = 100A / S IF = 13A, dlF/dt = 100A / S Q2 28 nS Q1 10 Reverse Recovery Charge Q rr Q2 12 nC Q1 2 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=35A,Q2=35A.

REV1.0 G-19-4 Dual N-Channel Enhancement Mode Field Effect Transistor PKC46DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 1 02 03 04 05 06 0 VDS=15V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 0.002 0.004 0.006 0.008 0.01 2468 1 0 ID=20A 0.001 0.002 0.003 0.004 0.005 0 6 12 18 24 30 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 012345 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=2.7V VGS=3V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) TYPICAL PERFORMANCE CHARACTERISTICS

REV1.0 G-19-4 Dual N-Channel Enhancement Mode Field Effect Transistor PKC46DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 52 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.01 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 52˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 52 ˚C/W TA = 25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature

REV1.0 G-19-4 Dual N-Channel Enhancement Mode Field Effect Transistor PKC46DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 25℃ 125℃ -20℃ 012345 0369 1 2 1 5 VDS=15V ID=13A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0.002 0.004 0.006 0.008 0.01 2468 1 0 ID=13A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.2V VGS=2.9V VGS=3.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V)

REV1.0 G-19-4 Dual N-Channel Enhancement Mode Field Effect Transistor PKC46DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 72 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 72˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 72 ˚C/W TA = 25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=13A 25℃ 150℃ 0.1 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature