PK884DS NIKOSEM | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • 100% UIS and Rg Tested.

Applications

  • Computing DC to DC converters.
  • Communications DC to DC converters.
  • General Purpose Point of load. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current3 TC=25 °C ID 85 53 A TC=100 °C 70 33 Pulsed Drain Current1 IDM 206 120 Continuous Drain Current TA=25 °C ID 30 18 TA=70 °C 24 15 Avalanche Current IAS 94 58 Avalanche Energy L=0.01mH EAS 44 16.8 mJ Power Dissipation TC=25 °C PD 44 25 W TC=100 °C 17 10 Power Dissipation4 TA=25 °C PD 3.2 3 W TA=70 °C 2.1 1.9 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA Q2 39 °C / W Q1 41 Junction-to-Ambient2 Steady-State RJA Q2 64 Q1 69 Junction-to-Case Steady-State RJC Q2 2.8 Q1 5 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3The maximum current rating is Package limited. 4The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A Q2 30 V Q1 30 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A Q2 1.2 1.6 2.2 Q1 1.2 1.6 2.2 Gate-Body Leakage IGSS VDS=0V, VGS=±20V Q2 ±100 nA VDS=0V, VGS=±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V Q2 1 Q1 1 VDS=30V, VGS=0V, TJ=55 °C Q2 10 Q1 10 Drain-Source On-State Resistance5 RDS(ON) VGS=4.5V, ID=16A Q2 1.9 3 mΩ VGS=4.5V, ID=13A Q1 5.3 8 VGS=10V, ID=20A Q2 1.3 2 VGS=10V, ID=13A Q1 2.9 5 Forward Transconductance5 gfs VDS=5V, ID=20A Q2 114 S VDS=5V, ID=13A Q1 60

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS=0V, VDS=15V, f=1MHz Q2 2079 pF Q1 1048 Output Capacitance Coss Q2 616 Q1 259 Reverse Transfer Capacitance Crss Q2 60 Q1 47.5 Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz Q2 1 Ω Q1 1.7 Total Gate Charge6 Qg VGS =10V VDS=15V, VGS=10V, ID=20A VDS=15V, VGS=10V, ID=13A Q2 32 nC Q1 17.7 VGS=4.5V Q2 15 Q1 8.8 Gate-Source Charge6 Qgs Q2 5.1 Q1 2.8 Gate-Drain Charge6 Qgd Q2 4.1 Q1 3 Turn-On Delay Time6 td(on) VDS=15V, ID20A, VGS=10V, RGEN=6Ω VDS=15V, ID13A, VGS=10V, RGEN=6Ω Q2 13 nS Q1 10 Rise Time6 tr Q2 72 Q1 57 Turn-Off Delay Time6 td(off) Q2 42 Q1 28 Fall Time6 tf Q2 84 Q1 73 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS Q2 44 A Q1 20 Forward Voltage5 VSD IF=20A, VGS=0V Q2 1 V IF=13A, VGS=0V Q1 1.2 Reverse Recovery Time trr Q2 IF=20A, dlF/d =100A / S IF=13A, dlF/dt=100A / S Q2 19 nS Q1 13 Reverse Recovery Charge Qrr Q2 8 nC Q1 4.1 5Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 6Independent of operating temperature.

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.6V VGS=2.5V VGS=2.4V CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0 7 14 21 28 35 VDS=15V ID=20A 0.001 0.002 0.003 0.004 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.002 0.004 0.006 0.008 0.01 2 4 6 8 10 ID=20A TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC)

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 150℃ 25℃ 0.1 100 1000 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.01 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 64 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 64 ˚C/W TA = 25 ˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 64 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 120 160 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.8 ˚C/W TC = 25 ˚C DC 10ms 1ms 100uS 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC = 25˚C 3.RθJC = 2.8 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Single Pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.8 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 0 4 8 12 16 20 VDS=15V ID=13A 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.6V VGS=2.8V VGS=2.5V VGS=2.4V 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.003 0.006 0.009 0.012 0.015 2 4 6 8 10 ID=13A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC)

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 150℃ 25℃ 0.1 100 1000 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=13A 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 69 ˚C/W TA= 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 69 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Single Pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 69 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA

REV 1.1 N-15-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK884DS PDFN 5x6S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 120 160 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 5 ˚C/W TC = 25˚C DC 10ms 1ms 100us 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Single Pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC