PK6M6DX NIKOSEM | Alldatasheet
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Halogen-Free & Lead-Free REV 1.0 I-38-3 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM D1 D1 D2 D2 S1 G1 S2 G2#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 28.8 Pulsed Drain Current1 IDM 94 Continuous Drain Current TA = 25 °C ID TA = 70 °C 11 Avalanche Current IAS 32 Avalanche Energy L = 0.1mH EAS 51 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 14 Power Dissipation TA = 25 °C PD 3.1 W TA = 70 °C 2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA °C / W Steady-State 76 Junction-to-Case RJC 3.6 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 8.5mΩ 45A
Halogen-Free & Lead-Free REV 1.0 I-38-3 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 11A 7.5 12 mΩ VGS = 10V, ID = 11A 6.2 8.5 Forward Transconductance1 gfs VDS = 5V, ID = 11A 80 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1MHz 2004 pF Output Capacitance Coss 231 Reverse Transfer Capacitance Crss 147 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.1 Ω Total Gate Charge2 Qg VGS = 10V VDS = 20V , VGS = 10V, ID = 11A nC VGS = 4.5V 19 Gate-Source Charge2 Qgs 5.4 Gate-Drain Charge2 Qgd 7.9 Turn-On Delay Time2 td(on) VDS = 20V , ID 11A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 58 Turn-Off Delay Time2 td(off) 54 Fall Time2 tf 88 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 27 A Forward Voltage1 VSD IF = 11A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 11A, dlF/dt = 100A / S 21 nS Reverse Recovery Charge Qrr 11 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
Halogen-Free & Lead-Free REV 1.0 I-38-3 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=3.3V VGS=2.7V 0.004 0.008 0.012 0.016 0.02 2 4 6 8 10 ID=11A 0 1 2 3 4 5 6 -20℃ 125℃ 25℃ CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A 0.004 0.008 0.012 0.016 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V
Halogen-Free & Lead-Free REV 1.0 I-38-3 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 8 16 24 32 40 VDS=20V ID=11A 0.1 100 150℃ 25℃ single pulse Duty cycle= 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 76 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 76 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 76 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)
Halogen-Free & Lead-Free REV 1.0 I-38-3 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle= 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.6 ˚C/W TC = 25˚C Safe Operating Area Single Pulse Maximum Power Dissipation DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 3.6 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)