PK6B2BA NIKOSEM | Alldatasheet
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REV 1.1 E-38-4 N-Channel Enhancement Mode Field Effect Transistor PK6B2BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 33 Pulsed Drain Current1 IDM 120 Continuous Drain Current TA = 25 °C ID TA = 70 °C 14 Avalanche Current IAS 25 Avalanche Energy L = 0.1mH EAS 31 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 12 Power Dissipation4 TA = 25 °C PD 3.9 W TA = 70 °C 2.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 32 °C / W Junction-to-Ambient2 Steady-State RJA 57 Junction-to-Case Steady-State RJC 4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 35A. 4The Power dissipation is based on RJA t ≦10s value G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 6mΩ 52A G D S
REV 1.1 E-38-4 N-Channel Enhancement Mode Field Effect Transistor PK6B2BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.6 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 13A 5.2 8.5 mΩ VGS = 10V, ID = 13A 3.9 6 Forward Transconductance1 gfs VDS = 5V, ID = 13A 86 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 979 pF Output Capacitance Coss 192 Reverse Transfer Capacitance Crss 117 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.85 Ω Total Gate Charge2 Qg VGS = 10V VDS = 15V , VGS = 10V, ID = 13A nC VGS = 4.5V 11 Gate-Source Charge2 Qgs 2.3 Gate-Drain Charge2 Qgd 6 Turn-On Delay Time2 td(on) VDS = 15V , ID 13A, VGS = 10V, RGEN =6Ω 17.2 nS Rise Time2 tr 10 Turn-Off Delay Time2 td(off) 36.8 Fall Time2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 25 A Forward Voltage1 VSD IF = 13A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 13A, dlF/dt = 100A / S 11.5 nS Reverse Recovery Charge Qrr 2 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.1 E-38-4 N-Channel Enhancement Mode Field Effect Transistor PK6B2BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.002 0.005 0.008 0.011 0.014 0.017 0.02 2 4 6 8 10 ID=13A 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=13A 0 2 4 6 8 10 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.5V VGS=3V 25℃ 125℃ -20℃ 0 1 2 3 4 5 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) Normalized Drain to Source ON-Resistance C , Capacitance(pF)
REV 1.1 E-38-4 N-Channel Enhancement Mode Field Effect Transistor PK6B2BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 57 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 57˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 57˚C/W TA=25˚C 25℃ 150℃ 0.1 100 0 5 10 15 20 25 VDS=15V ID=13A Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]