DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Halogen-Free & Lead-Free REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 26.6 Pulsed Drain Current1 I DM 100 Continuous Drain Current TA = 25 °C ID TA = 70 °C 9 Avalanche Current I AS 33.7 Avalanche Energy L = 0.1mH E AS 56.8 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 12.5 Power Dissipation TA = 25 °C PD 2.3 W TA = 70 °C 1.5 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 54 °C / W Junction-to-Case RJC 4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 40V 8mΩ 42A G D S
Halogen-Free & Lead-Free REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 11A 6.4 12 mΩ VGS = 10V, ID = 11A 5.5 8 Forward Transconductance1 g fs V DS = 5V, ID = 11A 55 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 1672 pFOutput Capacitance C oss 206 Reverse Transfer Capacitance C rss 124 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.3 Ω Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 11A nC VGS = 4.5V 18 Gate-Source Charge2 Q gs 5.1 Gate-Drain Charge2 Q gd 8.3 Turn-On Delay Time2 t d(on) VDS = 15V , ID 11A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 11 Turn-Off Delay Time2 t d(off) 41 Fall Time2 t f 12 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 24 A Forward Voltage1 V SD I F = 11A, VGS = 0V 1.3 V Reverse Recovery Time t rr IF = 11A, dlF/dt = 100A / S 19.5 nS Reverse Recovery Charge Q rr 9.4 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
Halogen-Free & Lead-Free REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF) 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 012345 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A CISS COSS CRSS 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 25 30 0 7 14 21 28 35 VDS=20V ID=11A 25℃ 125℃ ‐20℃
Halogen-Free & Lead-Free REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec] 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 54˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 54˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 54 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA