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REV1.0 E-16-2 N-Channel Enhancement Mode Field Effect Transistor PK698SA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 40 Pulsed Drain Current1 I DM 150 Continuous Drain Current TA = 25 °C ID TA = 70 °C 21 Avalanche Current I AS 51 Avalanche Energy L = 0.1mH E AS 129 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 15.6 Power Dissipation TA = 25 °C PD W TA = 70 °C 2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 40 °C / W Junction-to-Case RJC 3.2 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 51A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, ID = 1mA 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 2.4mΩ 95A
REV1.0 E-16-2 N-Channel Enhancement Mode Field Effect Transistor PK698SA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 0.3 mA VDS = 20V, VGS = 0V, TJ = 55 °C 30 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 16A 2.3 3 mΩ VGS = 10V, ID = 20A 1.9 2.4 Forward Transconductance1 g fs V DS = 5V, ID = 20A 80 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 3200 pFOutput Capacitance C oss 596 Reverse Transfer Capacitance C rss 350 Gate Resistance Rg V GS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Q g VGS = 10V VDS = 15V ,ID = 20A 63.7 nC VGS = 4.5V 33.2 Gate-Source Charge2 Q gs 8 Gate-Drain Charge2 Q gd 16 Turn-On Delay Time2 t d(on) VDS = 15V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 16 Turn-Off Delay Time2 t d(off) 60 Fall Time2 t f 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 65 A Forward Voltage1 V SD I F = 1A, VGS = 0V 0.6 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 29 nS Reverse Recovery Charge Q rr 13 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 51A.
REV1.0 E-16-2 N-Channel Enhancement Mode Field Effect Transistor PK698SA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF) CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 0 1 02 03 04 05 06 0 VDS=15V ID=20A 25℃150℃ 0.1 100 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V VGS=2.5V 012345 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 125℃ ‐20℃
REV1.0 E-16-2 N-Channel Enhancement Mode Field Effect Transistor PK698SA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 50˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 40 ℃/W 3.TJ-TA = P*RthJA(t) 100 120 140 160 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 40˚C/W TA=25˚C
REV1.0 E-16-2 N-Channel Enhancement Mode Field Effect Transistor PK698SA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM