PK650DY NIKOSEM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications
  • Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 83 36 A TC = 100 °C 52 23 Pulsed Drain Current1 IDM 130 55 Continuous Drain Current TA = 25 °C ID 21 10 TA = 70 °C 17 8 Avalanche Current IAS 52 21 Avalanche Energy L = 0.1mH EAS 135 22 mJ Power Dissipation TC = 25 °C PD 36 28 W TC = 100 °C 14 11 Power Dissipation TA = 25 °C PD 2.4 2 W TA = 70 °C 1.5 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.8mΩ 83A Q1 30V 11mΩ 36A

REV1.1 H-21-2 Dual N-Channel Enhancement Mode Field Effect Transistor PK650DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA Q2 51 °C / W RJA Q1 60 Junction-to-Case RJC Q2 3.4 RJC Q1 4.4 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=29A,Q2=42A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q2 30 V Q1 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Q2 1 Q1 1 VDS = 20V, VGS = 0V, TJ = 55 °C Q2 10 Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 16A Q2 2.1 3.8 mΩ VGS =4.5V, ID = 10A Q1 10 14 VGS = 10V, ID = 20A Q2 1.6 2.8 VGS = 10V, ID = 10A Q1 6.8 11 Forward Transconductance1 gfs VDS = 5V, ID = 20A Q2 55 S VDS = 5V, ID = 10A Q1 40

REV1.1 H-21-2 Dual N-Channel Enhancement Mode Field Effect Transistor PK650DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz Q2 3685 pF Q1 531 Output Capacitance Coss Q2 615 Q1 147 Reverse Transfer Capacitance Crss Q2 388 Q1 67 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 1 Ω Q1 1 Total Gate Charge2 Qg VGS = 10V VDS = 15V , ,ID = 20A VDS = 15V , ID = 10A Q2 72 nC Q1 10 VGS = 4.5V Q2 37 Q1 5.6 Gate-Source Charge2 Qgs Q2 10 Q1 1.4 Gate-Drain Charge2 Qgd Q2 18 Q1 3 Turn-On Delay Time2 td(on) VDS = 15V , ID  20A, VGS = 10V, RGEN =6Ω VDS = 15V , ID  10A, VGS = 10V, RGEN =6Ω Q2 32 nS Q1 15 Rise Time2 tr Q2 16 Q1 13 Turn-Off Delay Time2 td(off) Q2 72 Q1 21 Fall Time2 tf Q2 10 Q1 15 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 36 A Q1 23 Forward Voltage1 VSD IF = 20A, VGS = 0V Q2 1 V IF = 10A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = 20A, dlF/dt = 100A / S IF = 10A, dlF/dt = 100A / S Q2 28 nS Q1 8.8 Reverse Recovery Charge Qrr Q2 13 nC Q1 1.2 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=29A,Q2=42A.

REV1.1 H-21-2 Dual N-Channel Enhancement Mode Field Effect Transistor PK650DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.002 0.004 0.006 0.008 0.01 2 4 6 8 10 ID=20A 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=3V 0 20 40 60 80 100 VDS=15V ID=20A CISS COSS CRSS 900 1800 2700 3600 4500 0 5 10 15 20 25 30 VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC)

REV1.1 H-21-2 Dual N-Channel Enhancement Mode Field Effect Transistor PK650DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 51 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 51 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 51˚C/W TA=25˚C 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature

REV1.1 H-21-2 Dual N-Channel Enhancement Mode Field Effect Transistor PK650DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 2 4 6 8 10 VDS=15V ID=10A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.005 0.01 0.015 0.02 2 4 6 8 10 ID=10A 0.005 0.01 0.015 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V VGS=4V VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC)

REV1.1 H-21-2 Dual N-Channel Enhancement Mode Field Effect Transistor PK650DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA = 25˚C 3.RθJA = 60 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature