DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Halogen-Free & Lead-Free REV1.0 E-2-1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 49 Pulsed Drain Current1 I DM 150 Continuous Drain Current TA = 25 °C ID TA = 70 °C 16 Avalanche Current I AS 40 Avalanche Energy L = 0.1mH E AS 80 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 14 Power Dissipation TA = 25 °C PD 2.6 W TA = 70 °C 1.6 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 48 °C / W Junction-to-Case RJC 3.4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 40A. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 3.3mΩ 78A G D S
Halogen-Free & Lead-Free REV1.0 E-2-1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.5 1.9 2.35 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 16A 3 4 mΩ VGS = 10V, ID = 20A 2.1 3.3 Forward Transconductance1 g fs V DS = 5V, ID = 20A 62 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 2096 pFOutput Capacitance C oss 393 Reverse Transfer Capacitance C rss 229 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.5 Ω Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 20A nC VGS = 4.5V 22 Gate-Source Charge2 Q gs 6.6 Gate-Drain Charge2 Q gd 11 Turn-On Delay Time2 t d(on) VDS = 15V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 15 Turn-Off Delay Time2 t d(off) 54 Fall Time2 t f 17 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 36 A Forward Voltage1 V SD I F = 20A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 28 nS Reverse Recovery Charge Q rr 15 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 40A.
Halogen-Free & Lead-Free REV1.0 E-2-1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM 25℃150℃ 0.1 100 1000 0 9 18 27 36 45 VDS=15V ID=20A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature 012345 VGS=10V VGS=9V VGS=7V VGS=5V VGS=4..5V VGS=3.5V VGS=3.4V VGS=3.1V VGS=2.8V VGS=2.9V VGS=3V VGS=3.2V VGS=3.3V 25℃ 125℃ -20℃ 012345 CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 Normalized Drain to Source ON-Resistance C , Capacitance(pF)
Halogen-Free & Lead-Free REV1.0 E-2-1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 48 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 48˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 48˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]