PK630HY NIKOSEM | Alldatasheet
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REV 1.0 G-08-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK630HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 64 40 A TC = 100 °C 40 25 Pulsed Drain Current1 IDM 150 90 Continuous Drain Current TA = 25 °C ID 21 14 TA = 70 °C 17 11 Avalanche Current IAS 35 21 Avalanche Energy L = 0.1mH EAS 61 22 mJ Power Dissipation TC = 25 °C PD 37 24 W TC = 100 °C 15 9.6 Power Dissipation4 TA = 25 °C PD 4 3.1 W TA = 70 °C 2.6 2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA Q2 30 °C / W Q1 40 Steady-State RJA Q2 56 Q1 72 Junction-to-Case RJC Q2 3.3 RJC Q1 5.2 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=25A,Q2=25A 4The Power dissipation is based on RJA t ≦10s value. 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 4.9mΩ 64A Q1 30V 7.8mΩ 40A
REV 1.0 G-08-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK630HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA Q2 30 V VGS = 0V, ID = 250A Q1 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Q2 1.3 1.6 2.3 Q1 1.27 1.36 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Q2 0.5 mA Q1 1 A VDS = 20V, VGS = 0V, TJ = 55 °C Q2 5 mA Q1 10 A Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 16A Q2 3.4 5.1 mΩ VGS =4.5V, ID = 11A Q1 6.8 11 VGS = 10V, ID = 20A Q2 2.7 4.9 VGS = 10V, ID = 11A Q1 5.3 7.8 Forward Transconductance1 gfs VDS = 5V, ID = 20A Q2 70 S VDS = 5V, ID = 11A Q1 66 DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz Q2 2148 pF Q1 853 Output Capacitance Coss Q2 402 Q1 149 Reverse Transfer Capacitance Crss Q2 255 Q1 109 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 1.6 Ω Q1 0.8 Total Gate Charge2 Qg VGS = 10V VDS = 15V , VGS = 10V, ID = 20A VDS = 15V , VGS = 10V, ID = 11A Q2 44 nC Q1 18 VGS = 4.5V Q2 23.3 Q1 10 Gate-Source Charge2 Qgs Q2 5.4 Q1 2.1 Gate-Drain Charge2 Qgd Q2 11 Q1 4.8
REV 1.0 G-08-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK630HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) VDS = 15V , ID 20A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 11A, VGS = 10V, RGEN =6Ω Q2 30 nS Q1 25 Rise Time2 tr Q2 20 Q1 21 Turn-Off Delay Time2 td(off) Q2 61 Q1 40 Fall Time2 tf Q2 22 Q1 20 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 37 A Q1 20 Forward Voltage1 VSD IF =20A, VGS = 0V Q2 1 V IF = 11A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = 20A, dlF/dt = 100A / S IF = 11A, dlF/dt = 100A / S Q2 21 nS Q1 13.5 Reverse Recovery Charge Qrr Q2 6.5 nC Q1 4 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=25A,Q2=25A
REV 1.0 G-08-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK630HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 10 20 30 40 50 VDS=15V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.002 0.004 0.006 0.008 0.01 0 4 8 12 16 20 VGS=10V VGS=4.5V 0.004 0.008 0.012 0.016 0.02 2 4 6 8 10 ID=20A 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.7V VGS=2.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) TYPICAL PERFORMANCE CHARACTERISTICS
REV 1.0 G-08-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK630HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 56 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 56˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 56˚C/W TA = 25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 150℃ 0.1 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature
REV 1.0 G-08-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK630HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 4 8 12 16 20 VDS=15V ID=11A CISS COSS CRSS 200 400 600 800 1000 0 5 10 15 20 25 30 0.002 0.004 0.006 0.008 0.01 0 4 8 12 16 20 VGS=10V VGS=4.5V 0.004 0.008 0.012 0.016 0.02 2 4 6 8 10 ID=11A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.5V VGS=3V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V)
REV 1.0 G-08-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK630HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 72˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 72˚C/W TA=25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A 25℃ 150℃ 0.1 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 72 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA