PK626HY NIKOSEM | Alldatasheet
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REV1.0 E-4-5 Dual N-Channel Enhancement Mode Field Effect Transistor PK626HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 99 43 A TC = 100 °C 63 27 Pulsed Drain Current1 IDM 120 55 Continuous Drain Current TA = 25 °C ID 25 11 TA = 70 °C 20 9.5 Avalanche Current IAS 48 23 Avalanche Energy L = 0.1mH EAS 115 26.4 mJ Power Dissipation TC = 25 °C PD 43 24 W TC = 100 °C 17 9.6 Power Dissipation TA = 25 °C PD 2.7 1.7 W TA = 70 °C 1.7 1.1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA Q2 46 °C / W RJA Q1 70 Junction-to-Case RJC Q2 2.9 RJC Q1 5.2 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=29A,Q2=34A 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.4mΩ 99A Q1 30V 7mΩ 43A
REV1.0 E-4-5 Dual N-Channel Enhancement Mode Field Effect Transistor PK626HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA Q2 30 V VGS = 0V, ID = 250A Q1 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Q2 0.5 mA Q1 1 A VDS = 20V, VGS = 0V, TJ = 55 °C Q2 5 mA Q1 10 A Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 15A Q2 2.3 3 mΩ VGS =4.5V, ID = 11A Q1 7.4 9.5 VGS = 10V, ID = 20A Q2 1.9 2.4 VGS = 10V, ID = 11A Q1 5.6 7 Forward Transconductance1 gfs VDS = 5V, ID = 20A Q2 70 S VDS = 5V, ID = 11A Q1 50 DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz Q2 3232 pF Q1 824 Output Capacitance Coss Q2 606 Q1 162 Reverse Transfer Capacitance Crss Q2 353 Q1 103 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 1.25 Ω Q1 2.3 Total Gate Charge2 Qg VGS = 10V VDS = 15V , VGS = 10V, ID = 20A VDS = 15V , VGS = 10V, ID = 11A Q2 63 nC Q1 18 VGS = 4.5V Q2 34 Q1 10 Gate-Source Charge2 Qgs Q2 8.3 Q1 2 Gate-Drain Charge2 Qgd Q2 15.5 Q1 6
REV1.0 E-4-5 Dual N-Channel Enhancement Mode Field Effect Transistor PK626HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) VDS = 15V , ID 20A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 11A, VGS = 10V, RGEN =6Ω Q2 31 nS Q1 27 Rise Time2 tr Q2 15 Q1 20 Turn-Off Delay Time2 td(off) Q2 64 Q1 40 Fall Time2 tf Q2 22 Q1 19 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 71 A Q1 20 Forward Voltage1 VSD IF = 1A, VGS = 0V Q2 0.6 V IF = 11A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = 20A, dlF/dt = 100A / S IF = 11A, dlF/dt = 100A / S Q2 28.8 nS Q1 16.5 Reverse Recovery Charge Qrr Q2 12.7 nC Q1 5.2 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=29A,Q2=34A
REV1.0 E-4-5 Dual N-Channel Enhancement Mode Field Effect Transistor PK626HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 0 13 26 39 52 65 VDS=15V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 0 1 2 3 4 5 6 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=2.5V VGS=2.7V 25℃ 125℃ -20℃ 0 1 2 3 4 5 TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature
REV1.0 E-4-5 Dual N-Channel Enhancement Mode Field Effect Transistor PK626HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 46 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 46˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 46 ˚C/W TC=25˚C T1 , Square Wave Pulse Duration[sec] Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance
REV1.0 E-4-5 Dual N-Channel Enhancement Mode Field Effect Transistor PK626HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 0 4 8 12 16 20 VDS=15V ID=11A CISS COSS CRSS 200 400 600 800 1000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A 0 1 2 3 4 5 6 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V VGS=2.7V VGS=3.3V 25℃ 125℃ -20℃ 0 1 2 3 4 5 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) VSD, Source-To-Drain Voltage(V) Transfer Characteristics Output Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) Capacitance Characteristic Gate charge Characteristics Characteristics VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) C , Capacitance(pF) Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A)
REV1.0 E-4-5 Dual N-Channel Enhancement Mode Field Effect Transistor PK626HY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 70 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 70˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 70 ˚C/W TA=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Transient Thermal Response Curve VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) T1 , Square Wave Pulse Duration[sec] r(t) , Normalized Effective Transient Thermal Resistance