PK615CA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications.
- DC Motor for BLDC Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -30 30 V Gate-Source Voltage VGS ±25 ±20 V Continuous Drain Current TC = 25 °C ID -25 48 A TC = 100 °C -16 30 Pulsed Drain Current1 IDM -100 130 Continuous Drain Current3 TA = 25 °C ID -8 12 TA = 70 °C -6.4 10 Avalanche Current IAS -24 22 Avalanche Energy L = 0.1mH EAS 29 24 mJ Power Dissipation TC = 25 °C PD 26 42 W TC = 100 °C 10 17 Power Dissipation3 TA = 25 °C PD 2.7 2.8 W TA = 70 °C 1.7 1.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -30V 24mΩ -25A Q1 30V 9.9mΩ 48A G. GATE D. DRAIN S. SOURCE
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA Q2 47 °C / W Q1 44 Junction-to-Ambient2 Steady-State RJA Q2 75 Q1 72 Junction-to-Case RJC Q2 4.9 Q1 3 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A Q2 -30 V VGS = 0V, ID = 250A Q1 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A Q2 -1.3 -1.7 -2.3 VDS = VGS, ID = 250A Q1 1.47 1.8 2.35 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA VDS = 0V, VGS = ±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V Q2 -1 VDS = 30V, VGS = 0V Q1 1 VDS = -30V, VGS = 0V, TJ = 55 °C Q2 -10 VDS = 30V, VGS = 0V, TJ = 55 °C Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -7A Q2 28.1 40 mΩ VGS = 4.5V, ID = 13A Q1 10.1 14 VGS = -10V, ID = -7A Q2 18.7 24 VGS = 10V, ID = 13A Q1 7.6 9.9 Forward Transconductance1 gfs VDS = -5V, ID = -7A Q2 50 S VDS = 5V, ID = 13A Q1 28
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance6 Ciss Q2 VGS = 0V, VDS = -15V f = 1MHz VGS = 0V, VDS = 15V f = 1MHz Q2 801 1002 1202 pF Q1 672 840 1008 Output Capacitance6 Coss Q2 133 167 200 Q1 120 150 180 Reverse Transfer Capacitance6 Crss Q2 75 125 175 Q1 65 109 152 Gate Resistance6 Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 0.2 7.5 10 Ω Q1 0.2 0.65 3 Total Gate Charge5,6 Qg VGS = 10V VDS = -15V VGS = -10V, ID = -7A VDS = 15V VGS = 10V, ID = 13A Q2 12 20 28 nC Q1 10 18 25 VGS = 4.5V Q2 6 10 14 Q1 5.9 9.9 13.8 Gate-Source Charge5,6 Qgs Q2 1.4 2.4 3.4 Q1 1.3 2.1 2.9 Gate-Drain Charge5,6 Qgd Q2 2.8 4.6 6.4 Q1 3.2 5.3 7.4 Turn-On Delay Time5 td(on) Q2 , VDS = -15V ID -7A VGS = -10V, RGEN =6Ω Q1 , VDS = 15V ID 13A, VGS = 10V, RGEN =6Ω Q2 7.4 nS Q1 9 Rise Time5 tr Q2 40 Q1 73 Turn-Off Delay Time5 td(off) Q2 47 Q1 24 Fall Time5 tf Q2 63 Q1 105 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS Q2 -20 A Q1 35 Forward Voltage4 VSD IF = -7A VGS = 0V Q2 -1.3 V IF = 13A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = -7A dlF/dt = 100A / S IF = 13A, dlF/dt = 100A / S Q2 8.6 nS Q1 7.7 Reverse Recovery Charge Qrr Q2 2.1 nC Q1 1.6 4Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 5Independent of operating temperature. 6Guaranteed by design, not subject to production testing.
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0.008 0.016 0.024 0.032 0.04 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.008 0.016 0.024 0.032 0.04 2 4 6 8 10 ID=13A 0 1 2 3 4 5 6 -20℃ 125℃ 25℃ CISS COSS CRSS 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=13A TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 72 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Source-Drain Diode Forward Voltage IS , Source Current(A) VSD, Source-To-Drain Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) 0 4 8 12 16 20 VDS=15V ID=13A 0.1 100 150℃ 25℃ 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 72 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 72 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC Safe Operating Area Single Pulse Maximum Power Dissipation VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve 160 240 320 400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3V VGS=-3.5V 0.02 0.04 0.06 0.08 0.1 0 6 12 18 24 30 VGS=-10V VGS=-4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-7A 25℃ 0 1 2 3 4 5 6 -20℃ 125℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-7A CISS COSS CRSS 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 P-CHANNEL
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 75 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation -VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) 0 4 8 12 16 20 VDS=-15V ID=-7A 0.1 100 25℃ 150℃ 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 75 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJA = 75 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) -IS , Source Current(A) -ID , Drain Current(A) Power(W)
REV1.1 M-36-4 N- & P-Channel Enhancement Mode Field Effect Transistor PK615CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 4.9 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 120 180 240 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 4.9 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TC =25˚C 3.RθJC = 4.9 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) -ID , Drain Current(A) Power(W)