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REV 1.0 F - 4 5 - 4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V DS 30 30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 95 48 A TC = 100 °C 60 30 Pulsed Drain Current1 I DM 150 120 Continuous Drain Current TA = 25 °C ID 24 13 TA = 70 °C 19 10 Avalanche Current I AS 53 26 Avalanche Energy L = 0.1mH E AS 140 33.8 mJ Power Dissipation TC = 25 °C PD 36 25 W TC = 100 °C 14 10 Power Dissipation TA = 25 °C PD 2.4 1.8 W TA = 70 °C 1.5 1.1 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA Q2 52 °C / W RJA Q1 69 Junction-to-Case RJC Q2 3.4 RJC Q1 5 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=35A,Q2=35A. G: GATE D: DRAIN S: SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) ID Q2 30V 1.9mΩ 95A Q1 30V 5.5mΩ 48A
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A Q2 30 V Q1 30 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A Q2 1.3 1.7 2.3 Q1 1.3 1.7 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V Q2 1 Q1 1 VDS = 20V, VGS = 0V, TJ = 55 °C Q2 10 Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 16A Q2 1.8 2.5 mΩ VGS =4.5V, ID = 11A Q1 5.2 7.4 VGS = 10V, ID = 20A Q2 1.4 1.9 VGS = 10V, ID = 11A Q1 3.9 5.5 Forward Transconductance1 g fs VDS = 5V, ID = 20A Q2 70 S VDS = 5V, ID = 11A Q1 50 DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz Q2 2779 pF Q1 1041 Output Capacitance C oss Q2 522 Q1 198 Reverse Transfer Capacitance C rss Q2 318 Q1 123 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz Q2 0.83 Ω Q1 2 Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 20A VDS = 15V , VGS = 10V, ID = 11A Q2 54 nC Q1 21 VGS = 4.5V Q2 29 Q1 11 Gate-Source Charge2 Q gs Q2 7.1 Q1 2.4 Gate-Drain Charge2 Q gd Q2 13.4 Q1 6
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) VDS = 15V , ID 20A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 11A, VGS = 10V, RGEN =6Ω Q2 25 nS Q1 23 Rise Time2 t r Q2 17 Q1 16 Turn-Off Delay Time2 t d(off) Q2 54 Q1 50 Fall Time2 t f Q2 17 Q1 15 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S Q2 36 A Q1 20 Forward Voltage1 V SD IF =20A, VGS = 0V Q2 1 V IF = 11A, VGS = 0V Q1 1.2 Reverse Recovery Time t rr Q2 IF = 20A, dlF/dt = 100A / S IF = 11A, dlF/dt = 100A / S Q2 21 nS Q1 12.4 Reverse Recovery Charge Q rr Q2 10 nC Q1 4 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=35A,Q2=35A.
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 1 02 03 04 05 06 0 VDS=15V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 0.002 0.004 0.006 0.008 0.01 2468 1 0 ID=20A -8.67E-18 0.001 0.002 0.003 0.004 0.005 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=2.7V VGS=2.5V 25℃ 125℃ -20℃ 012345 VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC)
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 52 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.01 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 52˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 52˚C/W TA=25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM CISS CRSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 0 5 10 15 20 25 VDS=15V ID=11A 25℃ 125℃ -20℃ 012345 0.002 0.004 0.006 0.008 0.01 2468 1 0 ID=11A -2.08E-17 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=2.7V VGS=2.5V VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC)
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 69 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 69˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 69˚C/W TA=25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pul se Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-45-4 Dual N-Channel Enhancement Mode Field Effect Transistor PK612DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM