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REV 1.0 F - 5 1 - 3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V DS 30 30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 127 43 A TC = 100 °C 80 27 Pulsed Drain Current1 I DM 160 100 Continuous Drain Current TA = 25 °C ID 32 11 TA = 70 °C 25 9.4 Avalanche Current I AS 68.6 25 Avalanche Energy L = 0.1mH E AS 235 31 mJ Power Dissipation TC = 25 °C PD 39 24 W TC = 100 °C 15 9.8 Power Dissipation TA = 25 °C PD 2.5 1.7 W TA = 70 °C 1.6 1.1 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA Q2 50 °C / W RJA Q1 70 Junction-to-Case RJC Q2 3.2 RJC Q1 5.1 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=35A,Q2=35A G: GATE D: DRAIN S: SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) ID Q2 30V 1.2mΩ 127A Q1 30V 6.5mΩ 43A
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A Q2 30 V Q1 30 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A Q2 1.3 1.8 2.3 Q1 1.3 1.6 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V Q2 1 Q1 1 VDS = 20V, VGS = 0V, TJ = 55 °C Q2 10 Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 16A Q2 1.2 1.6 mΩ VGS =4.5V, ID = 11A Q1 6 9.5 VGS = 10V, ID = 20A Q2 0.85 1.2 VGS = 10V, ID = 11A Q1 4.3 6.5 Forward Transconductance1 g fs VDS = 5V, ID = 20A Q2 68 S VDS = 5V, ID = 11A Q1 50 DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz Q2 4056 pF Q1 888 Output Capacitance C oss Q2 782 Q1 171 Reverse Transfer Capacitance C rss Q2 456 Q1 99 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz Q2 1 Ω Q1 1.1 Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 20A VDS = 15V , VGS = 10V, ID = 11A Q2 81 nC Q1 17.3 VGS = 4.5V Q2 43 Q1 9.3 Gate-Source Charge2 Q gs Q2 12 Q1 2.5 Gate-Drain Charge2 Q gd Q2 19 Q1 4.7
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) VDS = 15V , ID 20A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 11A, VGS = 10V, RGEN =6Ω Q2 30 nS Q1 21 Rise Time2 t r Q2 19 Q1 15 Turn-Off Delay Time2 t d(off) Q2 61 Q1 46 Fall Time2 t f Q2 21 Q1 15 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S Q2 39 A Q1 20 Forward Voltage1 V SD IF =20A, VGS = 0V Q2 1 V IF = 11A, VGS = 0V Q1 1.2 Reverse Recovery Time t rr Q2 IF = 20A, dlF/dt = 100A / S IF = 11A, dlF/dt = 100A / S Q2 28 nS Q1 8.2 Reverse Recovery Charge Q rr Q2 15 nC Q1 1.3 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=35A,Q2=35A
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 1 73 45 16 88 5 VDS=15V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 0.002 0.004 0.006 0.008 0.01 2468 1 0 ID=20A 0.0004 0.0008 0.0012 0.0016 0.002 048 1 2 1 6 2 0 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 012345 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.6V VGS=3V Transfer Characteristics Output Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) V GS, Gate-To-Source Voltage(V) Gate charge Characteristics Ca pacitance Characteristic VGS , Gate-To-Source Voltage(V) C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) TYPICAL PERFORMANCE CHARACTERISTICS
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.01 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 50 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50˚C/W TA=25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) V SD, Source-To-Drain Voltage(V) On-Resistance VS Temperature T1 , Square Wave Pulse Duration[sec] Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) Transient Thermal Response Curve VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 4 8 12 16 20 VDS=15V ID=11A CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.02 0.04 0.06 0.08 0.1 2468 1 0 ID=11A 0.004 0.008 0.012 0.016 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 012345 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.7V VGS=2.9V VGS=3.2V Output Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) Transfer Characteristics VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Ca pacitance Characteristic C , Capacitance(pF) On-Resistance VS Gate-To-Source VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V)
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 70 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 70 ˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 70 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance On-Resistance VS Temperature VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) T1 , Square Wave Pulse Duration[sec] Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Transient Thermal Response Curve Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 F-51-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK610DZ PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM