PK609CA NIKOSEM | Alldatasheet
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REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM D1 D1 D2 D2 S1 G1 S2 G2#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -40 40 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current4 TC = 25 °C ID -14 19.5 A TC = 100 °C -8.8 12.3 Pulsed Drain Current1 IDM -54 63 Continuous Drain Current3 TA = 25 °C ID -5.3 7.7 Avalanche Current IAS -21 14 Avalanche Energy L = 0.1mH EAS 22 10 mJ Power Dissipation TC = 25 °C PD 21 20 W TC = 100 °C 8.6 8 Power Dissipation3 TA = 25 °C PD 3.1 3.1 W TA = 70 °C 2 2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA Q2 40 °C / W Q1 40 Junction-to-Ambient2 Steady-State RJA Q2 74 Q1 76 Junction-to-Case RJC Q2 5.8 Q1 6.2 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current :Q1=15A,Q2=-16A. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -40V 60mΩ -14A Q1 40V 25mΩ 19.5A G. GATE D. DRAIN S. SOURCE
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A Q2 -40 V VGS = 0V, ID = 250A Q1 40 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A Q2 -1.3 -1.87 -2.3 VDS = VGS, ID = 250A Q1 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA VDS = 0V, VGS = ±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V Q2 -1 VDS = 32V, VGS = 0V Q1 1 VDS = -30V, VGS = 0V, TJ = 55 °C Q2 -10 VDS = 30V, VGS = 0V, TJ = 55 °C Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -4A Q2 55.3 90 mΩ VGS = 4.5V, ID = 6A Q1 20.6 35 VGS = -10V, ID = -4A Q2 34.7 60 VGS = 10V, ID = 6A Q1 17.2 25 Forward Transconductance1 gfs VDS = -5V, ID = -4A Q2 16.6 S VDS = 5V, ID = 6A Q1 26 DYNAMIC Input Capacitance Ciss Q2 VGS = 0V, VDS = -20V, f = 1MHz VGS = 0V, VDS = 20V, f = 1MHz Q2 538 pF Q1 452 Output Capacitance Coss Q2 127 Q1 63 Reverse Transfer Capacitance Crss Q2 74 Q1 38 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 13 Ω Q1 4.4 Total Gate Charge2 Qg VGS = 10V VDS = -20V , VGS = -10V, ID = -4A VDS = 20V , VGS = 10V, ID = 6A Q2 11.6 nC Q1 9.8 VGS = 4.5V Q2 6.5 Q1 5.4 Gate-Source Charge2 Qgs Q2 1.4 Q1 1.2 Gate-Drain Charge2 Qgd Q2 3.3 Q1 2.7
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) Q2 , VDS = -20V , ID -4A, VGS = -10V, RGEN =6Ω Q1 , VDS = 20V , ID 6A, VGS = 10V, RGEN =6Ω Q2 11.4 nS Q1 9.9 Rise Time2 tr Q2 21.5 Q1 31 Turn-Off Delay Time2 td(off) Q2 58.1 Q1 25 Fall Time2 tf Q2 46.7 Q1 39.3 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 -14 A Q1 16 Forward Voltage1 VSD IF = -4A, VGS = 0V Q2 -1.2 V IF = 6A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = -4A, dlF/dt = 100A / S IF = 6A, dlF/dt = 100A / S Q2 13.5 nS Q1 11.2 Reverse Recovery Charge Qrr Q2 6.2 nC Q1 5.5 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=15A,Q2=-16A.
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain-To-Source Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.1V VGS=2.5V 0 3 6 9 12 VDS=20V ID=6A CISS COSS CRSS 100 200 300 400 500 600 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=6A 0.02 0.04 0.06 0.08 0.1 0 6 12 18 24 30 VGS=10V TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A)
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6A 0.1 100 25℃ 150℃ DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC = 25˚C 3.RθJC = 6.2˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 6.2 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 6.2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 76˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 76 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 76 ˚C/W TA = 25˚C ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) On-Resistance VS Drain-To-Source Current -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage Voltage -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-3.1V VGS=-4.5V VGS=-2.5V 0 3 6 9 12 VDS=-20V ID=-4A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-4A 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 24 28 32 VGS=-10V P-CHANNEL -ID, Drain-To-Source Current(A) C , Capacitance(pF) -VGS , Gate-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM)
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-4A 100 25℃ 150℃ DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TC = 25˚C 3.RθJC = 5.8˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 150 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 5.8 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 5.8 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC -IS , Source Current(A) -ID , Drain Current(A) Power(W)
REV1.0 H-38-3 N- & P-Channel Enhancement Mode Field Effect Transistor PK609CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 74˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 74 ˚C/W TA = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 74 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA -ID , Drain Current(A) Power(W)