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REV 1.0 E - 3 9 - 5 N-Channel Enhancement Mode Field Effect Transistor PK608DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V DS 30 30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 58 50 A TC = 100 °C 36 31 Pulsed Drain Current1 I DM 104 81 Continuous Drain Current TA = 25 °C ID 15 12 TA = 70 °C 12 10 Avalanche Current I AS 30 22 Avalanche Energy L = 0.1mH E AS 45 24 mJ Power Dissipation TC = 25 °C PD 35 28 W TC = 100 °C 14 11 Power Dissipation TA = 25 °C PD 2.4 2.1 W TA = 70 °C 1.5 1.3 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA Q2 52 °C / W RJA Q1 59 Junction-to-Case RJC Q2 3.5 RJC Q1 4.4 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=25A,Q2=34A. 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2 PRODUCT SUMMARY V (BR)DSS R DS(ON) ID Q2 30V 5.5mΩ 58A Q1 30V 7mΩ 50A

REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor PK608DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A Q2 30 V Q1 30 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A Q2 1.3 1.7 2.3 Q1 1.3 1.6 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V Q2 1 Q1 1 VDS = 20V, VGS = 0V, TJ = 55 °C Q2 10 Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 15A Q2 4.3 8 mΩ VGS =4.5V, ID = 12A Q1 6.3 9.5 VGS = 10V, ID = 15A Q2 3.3 5.5 VGS = 10V, ID = 12A Q1 4.8 7 Forward Transconductance1 g fs VDS = 5V, ID = 15A Q2 80 S VDS = 5V, ID = 12A Q1 67 DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz Q2 1395 pF Q1 852 Output Capacitance C oss Q2 275 Q1 162 Reverse Transfer Capacitance C rss Q2 167 Q1 103 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz Q2 1.3 Ω Q1 2.1 Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 15A VDS = 15V , VGS = 10V, ID = 12A Q2 29.6 nC Q1 18.6 VGS = 4.5V Q2 15.7 Q1 10 Gate-Source Charge2 Q gs Q2 4.1 Q1 2 Gate-Drain Charge2 Q gd Q2 8.5 Q1 5.4

REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor PK608DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) VDS = 15V , ID  15A, VGS = 10V, RGEN =6Ω VDS = 15V , ID  12A, VGS = 10V, RGEN =6Ω Q2 27 nS Q1 18 Rise Time2 t r Q2 16 Q1 13 Turn-Off Delay Time2 t d(off) Q2 66 Q1 33 Fall Time2 t f Q2 23 Q1 15 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S Q2 29 A Q1 23 Forward Voltage1 V SD IF = 15A, VGS = 0V Q2 1.2 V IF = 12A, VGS = 0V Q1 1.2 Reverse Recovery Time t rr Q2 IF = 15A, dlF/dt = 100A / S IF = 12A, dlF/dt = 100A / S Q2 21.3 nS Q1 15.8 Reverse Recovery Charge Q rr Q2 8.8 nC Q1 5.1 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=25A,Q2=34A.

REV 1.0 E - 3 9 - 5 N-Channel Enhancement Mode Field Effect Transistor PK608DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 25℃150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=15A 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.3V VGS=3V VGS=2.8V 25℃ 125℃ -20℃ 012345 0 6 12 18 24 30 VDS=15V ID=15A CISS COSS CRSS 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 30 TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature

REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor PK608DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 52˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 52 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 52 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]

REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor PK608DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 25℃150℃ 0.1 100 048 1 2 1 6 2 0 VDS=15V ID=12A CISS COSS CRSS 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=12A 25℃ 125℃ -20℃ 012345 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3VVGS=3.3V VGS=2.7V Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) V SD, Source-To-Drain Voltage(V) Transfer Characteristics Output Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) Capacitance CharacteristicGate charge Characteristics VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) C , Capacitance(pF) Qg , Total Gate Charge(nC) V DS, Drain-To-Source Voltage(V) On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A)

REV 1.0 E-39-5 N-Channel Enhancement Mode Field Effect Transistor PK608DY PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 59 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 59 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pul se Maximum Power Dissipation ID , Drain Current(A) Power(W) Transient Thermal Response Curve VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 59 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]