PK608BA

PK608BA NIKOSEM | Alldatasheet

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REV 1.0 E-25-5 N-Channel Enhancement Mode Field Effect Transistor PK608BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 55 Pulsed Drain Current1 IDM 150 Continuous Drain Current TA = 25 °C ID TA = 70 °C 15.6 Avalanche Current IAS 49 Avalanche Energy L = 0.1mH EAS 120 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 20 Power Dissipation TA = 25 °C PD 2.4 W TA = 70 °C 1.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RJA 50.2 °C / W Junction-to-Case RJC 2.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 51A. 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 3.5mΩ 87A G D S

REV 1.0 E-25-5 N-Channel Enhancement Mode Field Effect Transistor PK608BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V 1 VDS = 32V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 3 4.6 mΩ VGS = 10V, ID = 20A 2.6 3.5 Forward Transconductance1 gfs VDS = 5V, ID = 20A 136 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1MHz 3884 pF Output Capacitance Coss 441 Reverse Transfer Capacitance Crss 329 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.1 Ω Total Gate Charge2 Qg VGS = 10V VDS = 20V , VGS = 10V, ID = 20A nC VGS = 4.5V 40 Gate-Source Charge2 Qgs 11 Gate-Drain Charge2 Qgd 19 Turn-On Delay Time2 td(on) VDS = 20V , ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 18 Turn-Off Delay Time2 td(off) 65 Fall Time2 tf 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 38 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 25 nS Reverse Recovery Charge Qrr 19 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 E-25-5 N-Channel Enhancement Mode Field Effect Transistor PK608BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 0 16 32 48 64 80 VDS=20V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.5V VGS=2.6V VGS=2.8V VGS=3V VGS=2.9V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF)

REV 1.0 E-25-5 N-Channel Enhancement Mode Field Effect Transistor PK608BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50.2 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 50.2˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50.2˚C/W TA=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]