PK601CA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications.
- DC Motor for BLDC Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -30 30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current4 TC = 25 °C ID -22 23 A TC = 100 °C -14 14 Pulsed Drain Current1 IDM -45 50 Continuous Drain Current TA = 25 °C ID -7.8 8.6 Avalanche Current IAS -19 12 Avalanche Energy L = 0.1mH EAS 18 7.3 mJ Power Dissipation TC = 25 °C PD 25 22 W TC = 100 °C 10 9 Power Dissipation3 TA = 25 °C PD 3 3 W TA = 70 °C 2 2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -30V 28mΩ -22A Q1 30V 22mΩ 23A G. GATE D. DRAIN S. SOURCE
REV1.0 F-16-5 N- & P-Channel Enhancement Mode Field Effect Transistor PK601CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA Q2 °C / W Steady-State 57 Junction-to-Ambient2 t ≦10s RJA Q1 Steady-State 65 Junction-to-Case RJC Q2 5 RJC Q1 5.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current :Q1=10A,Q2=-10A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A Q2 -30 V VGS = 0V, ID = 250A Q1 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A Q2 -1 -1.5 -2.5 VDS = VGS, ID = 250A Q1 1 1.6 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA VDS = 0V, VGS = ±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V Q2 -1 VDS = 24V, VGS = 0V Q1 1 VDS = -20V, VGS = 0V, TJ = 55 °C Q2 -10 VDS = 20V, VGS = 0V, TJ = 55 °C Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -5A Q2 30 45 mΩ VGS = 4.5V, ID = 6A Q1 18 32 VGS = -10V, ID = -6A Q2 20 28 VGS = 10V, ID = 7A Q1 14 22 Forward Transconductance1 gfs VDS = -5V, ID = -6A Q2 18 S VDS = 5V, ID = 7A Q1 27
REV1.0 F-16-5 N- & P-Channel Enhancement Mode Field Effect Transistor PK601CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss Q2 VGS = 0V, VDS = -15V, f = 1MHz VGS = 0V, VDS = 15V, f = 1MHz Q2 929 pF Q1 341 Output Capacitance Coss Q2 145 Q1 84 Reverse Transfer Capacitance Crss Q2 122 Q1 48 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 12 Ω Q1 3 Total Gate Charge2 Qg VGS = 10V VDS = -15V , VGS = -10V, ID = -6A VDS = 15V , VGS = 10V, ID = 7A Q2 20.8 nC Q1 7.6 VGS = 4.5V Q2 10.8 Q1 4.3 Gate-Source Charge2 Qgs Q2 2 Q1 1 Gate-Drain Charge2 Qgd Q2 5 Q1 2 Turn-On Delay Time2 td(on) Q2 , VDS = -15V , ID -6A, VGS = -10V, RGEN =6Ω Q1 , VDS = 15V , ID 7A, VGS = 10V, RGEN =6Ω Q2 15 nS Q1 15 Rise Time2 tr Q2 30 Q1 30 Turn-Off Delay Time2 td(off) Q2 50 Q1 20 Fall Time2 tf Q2 41 Q1 13 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 -25 A Q1 20 Forward Voltage1 VSD IF = -6A, VGS = 0V Q2 -1 V IF = 7A, VGS = 0V Q1 1.1 Reverse Recovery Time trr Q2 IF = -6A, dlF/dt = 100A / S IF = 7A, dlF/dt = 100A / S Q2 12.6 nS Q1 7.9 Reverse Recovery Charge Qrr Q2 4.2 nC Q1 1.2 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=10A,Q2=-10A
REV1.0 F-16-5 N- & P-Channel Enhancement Mode Field Effect Transistor PK601CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 TYPICAL PERFORMANCE CHARACTERISTICS Q2 P-CHANNEL -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 0 1 2 3 4 5 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.5V VGS=-2.5V VGS=-3V 0.02 0.04 0.06 0.08 0.1 0 3 6 9 12 15 VGS=-10V VGS=-4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-6A CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 0 5 10 15 20 25 VDS=-15V ID=-6A COSS CISS
REV1.0 F-16-5 N- & P-Channel Enhancement Mode Field Effect Transistor PK601CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage Normalized Drain to Source ON-Resistance -IS , Source Current(A) TJ , Junction Temperature(˚C) -VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance On-Resistance VS Temperature -ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-6A 25℃ 150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 57˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 57˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 57 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA
REV1.0 F-16-5 N- & P-Channel Enhancement Mode Field Effect Transistor PK601CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) On-Resistance VS Drain Current ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 Q1 N-CHANNEL ID, Drain-To-Source Current(A) C , Capacitance(pF) VGS , Gate-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) 25℃ 125℃ -20℃ 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V 0.01 0.02 0.03 0.04 0 4 8 12 16 20 VGS=10V VGS=4.5V 0.01 0.02 0.03 0.04 0.05 0.06 2 4 6 8 10 ID=7A CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 0 2 4 6 8 VDS=15V ID=7A COSS CISS
REV1.0 F-16-5 N- & P-Channel Enhancement Mode Field Effect Transistor PK601CA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature IS , Source Current(A) ID , Drain Current(A) Power(W) 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=7A 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 65˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 65˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 65 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA