PK600BA NIKOSEM | Alldatasheet
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REV 1.0 D-45-4 N-Channel Enhancement Mode Field Effect Transistor PK600BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 25 Pulsed Drain Current1 IDM 100 Continuous Drain Current TA = 25 °C ID 10.7 TA = 70 °C 8.6 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16.2 mJ Power Dissipation TC = 25 °C PD 27.8 W TC = 100 °C 11 Power Dissipation TA = 25 °C PD W TA = 70 °C 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 63 °C / W Junction-to-Case RJC 4.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 20A. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9.5mΩ 40A G D S
REV 1.0 D-45-4 N-Channel Enhancement Mode Field Effect Transistor PK600BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID =9A 9.7 13.5 mΩ VGS = 10V, ID = 9.5A 7.4 9.5 Forward Transconductance1 gfs VDS = 5V, ID = 9.5A 62 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 608 pF Output Capacitance Coss 112 Reverse Transfer Capacitance Crss 74 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.8 Ω Total Gate Charge2 Qg VGS = 10V VDS = 15V , VGS = 10V, ID = 9.5A nC VGS = 4.5V 7.3 Gate-Source Charge2 Qgs 2 Gate-Drain Charge2 Qgd 3.7 Turn-On Delay Time2 td(on) VDS = 15V , ID 9.5A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 37 Turn-Off Delay Time2 td(off) 48 Fall Time2 tf 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 25 A Forward Voltage1 VSD IF = 9.5A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 9.5A, dlF/dt = 100A / S 11.7 nS Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 20A.
REV 1.0 D-45-4 N-Channel Enhancement Mode Field Effect Transistor PK600BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF) CISS COSS CRSS 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 0 3 6 9 12 15 VDS=15V ID=9.5A 0 1 2 3 4 5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=9.5A 25℃ 150℃ 0.1 100 0 1 2 3 4 5 VGS=10V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V 25℃ 125℃ -20℃
REV 1.0 D-45-4 N-Channel Enhancement Mode Field Effect Transistor PK600BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 63 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 63˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 63˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)