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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low R DS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- Products Integrated ESD diode with ESD Protected.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 24 V Gate-Source Voltage V GS ±12 V Continuous Drain Current4 TC = 25 °C ID A TC = 100 °C 37 Pulsed Drain Current1 I DM 120 Continuous Drain Current TA = 25 °C ID TA = 70 °C 16 Avalanche Current I AS 31 Avalanche Energy L = 0.1mH E AS 48 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 12 Power Dissipation3 TA = 25 °C PD 3.5 W TA = 70 °C 2.2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 24V 5mΩ 59A ESD Protected Gate
REV1.0 H-15-5 N-Channel Enhancement Mode Field Effect Transistor PK5M6EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / W Junction-to-Ambient2 Steady-State RJA 58 Junction-to-Case Steady-State RJC 4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is 51A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 24 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 0.7 0.9 1.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±10V ±30 A Zero Gate Voltage Drain Current I DSS VDS = 20V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 2.5V, ID = 10A 5.6 8.5 mΩVGS = 4.5V, ID = 10A 3.9 5.5 VGS = 10V, ID = 15A 3.3 5 Forward Transconductance1 g fs V DS = 5V, ID = 15A 76 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 12V, f = 1MHz 1842 pFOutput Capacitance C oss 297 Reverse Transfer Capacitance C rss 232 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.8 Ω Total Gate Charge2 Q g VGS = 10V VDS = 12V , ID = 15A nC VGS = 4.5V 20 Gate-Source Charge2 Q gs 2.2 Gate-Drain Charge2 Q gd 6.7 Turn-On Delay Time2 t d(on) VDS = 12V , ID 15A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 89 Turn-Off Delay Time2 t d(off) 77 Fall Time2 t f 136
REV1.0 H-15-5 N-Channel Enhancement Mode Field Effect Transistor PK5M6EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 25 A Forward Voltage1 V SD I F = 15A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 15A, dlF/dt = 100A / S 22 nS Reverse Recovery Charge Q rr 7.7 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 H-15-5 N-Channel Enhancement Mode Field Effect Transistor PK5M6EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 01234 0.003 0.006 0.009 0.012 0.015 02468 1 0 ID=15A
0123456 VGS=10V
VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=1.7V VGS=1.5V VGS=1.9V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V VGS=2.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=15A
REV1.0 H-15-5 N-Channel Enhancement Mode Field Effect Transistor PK5M6EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 58˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 58˚C/W TA=25˚C Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 9 18 27 36 45 VDS=12V ID=15A 25℃ 150℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 58 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA
REV1.0 H-15-5 N-Channel Enhancement Mode Field Effect Transistor PK5M6EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC