PK5G3EA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- Products Integrated ESD diode with ESD Protected up to 4KV.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TC = 25 °C ID -87 A TC = 100 °C -55 TA = 25 °C -15 TA = 70 °C -12 Pulsed Drain Current1 IDM -150 Avalanche Current IAS -68 Avalanche Energy L = 0.1mH EAS 231 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 31 TA = 25 °C 2.3 TA = 70 °C 1.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 55 °C / W Junction-to-Case RJC 1.6 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 6.1mΩ -87A G. GATE D. DRAIN S. SOURCE
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5G3EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM L-21-3 REV1.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.7 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±10 uA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 uA VDS = -20V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) mΩ VGS = -10V, ID = -20A 4.1 6.1 Forward Transconductance1 gfs VDS = -5V, ID = -20A 55 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 4924 pF Output Capacitance Coss 795 Reverse Transfer Capacitance Crss 715 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.9 Ω Total Gate Charge2 Qg(VGS=-10V) VDS =-15V, ID = -20A 120 nC Qg(VGS=-4.5V) 60 Gate-Source Charge2 Qgs 13 Gate-Drain Charge2 Qgd 28 Turn-On Delay Time2 td(on) VDS = -15V, ID -20A, VGS = -10V, RGS = 6Ω nS Rise Time2 tr 96 Turn-Off Delay Time2 td(off) 162 Fall Time2 tf 126 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -60 A Forward Voltage1 VSD IF = -20A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -20A , dlF/dt = 100 A / S 17 nS Reverse Recovery Charge Qrr 6.8 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5G3EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM L-21-3 REV1.1 Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(n On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-2.3V VGS=-2.7V VGS=-2.5V 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=-10V VGS=-4.5V 0.003 0.006 0.009 0.012 0.015 2 4 6 8 10 ID=-20A 0 25 50 75 100 125 VDS=-15V ID=-20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 0 1 2 3 4 5 25℃ 125℃ -20℃
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5G3EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM L-21-3 REV1.1 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-20A single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA= 55 ℃/W 3.TA-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 120 160 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 55 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJCA= 55 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 150℃ 25℃ Power(W) r(t) , Normalized Effective Transient Thermal Resistance
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5G3EA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM L-21-3 REV1.1 Transient Thermal Response Curve Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration(sec) 300 600 900 1200 1500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.6 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TC =25˚C 3.RθJC = 1.6 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC Power(W) r(t) , Normalized Effective Transient Thermal Resistance