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REV 1.1 H-1-5 N-Channel Enhancement Mode Field Effect Transistor PK5E4BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±25 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 25 Pulsed Drain Current1 I DM 120 Continuous Drain Current TA = 25 °C ID TA = 70 °C 11 Avalanche Current I AS 21 Avalanche Energy L = 0.1mH E AS 22 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 12 Power Dissipation4 TA = 25 °C PD 3.9 W TA = 70 °C 2.5 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 32 °C / W Junction-to-Ambient2 Steady-State RJA 58 Junction-to-Case Steady-State RJC 4.2 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 35A. 4The Power dissipation is based on RJA t ≦10s value. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 9.5mΩ 40A G D S
REV 1.1 H-1-5 N-Channel Enhancement Mode Field Effect Transistor PK5E4BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.5 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 8.8A 10 15 mΩ VGS = 10V, ID = 11A 7 9.5 Forward Transconductance1 g fs V DS = 5V, ID = 11A 30 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 530 pFOutput Capacitance C oss 155 Reverse Transfer Capacitance C rss 94 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 2.5 Ω Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 11A 13.5 nC VGS = 4.5V 7.7 Gate-Source Charge2 Q gs 1 Gate-Drain Charge2 Q gd 4.5 Turn-On Delay Time2 t d(on) VDS = 15V , ID 11A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 16 Turn-Off Delay Time2 t d(off) 35 Fall Time2 t f 17 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 24 A Forward Voltage1 V SD I F = 11A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 11A, dlF/dt = 100A / S 14 nS Reverse Recovery Charge Q rr 4 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.1 H-1-5 N-Channel Enhancement Mode Field Effect Transistor PK5E4BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 012345 On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0.002 0.004 0.006 0.008 0.01 0.012 0369 1 2 1 5 VGS=10V VGS=4.5V -5.55E-17 0.006 0.012 0.018 0.024 0.03 2468 1 0 ID=11A 0369 1 2 1 5 VDS=15V ID=11A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30
REV 1.1 H-1-5 N-Channel Enhancement Mode Field Effect Transistor PK5E4BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 58˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 58˚C/W TA=25˚C On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 58 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA